{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IPP50R190CEXKSA1","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IPP50R190CEXKSA1","canonicalUrl":"https://icboms.com/infineon/IPP50R190CEXKSA1","factsUrl":"https://icboms.com/api/mcp/products/IPP50R190CEXKSA1","rawCanonicalId":null},"summary":{"shortDescription":"Infineon CoolMOS™ CE series, IPP50R190CEXKSA1, N-Channel MOSFET, 500 V Vdss, 18.5 A Id, 190 mOhm Rds(on) at 6.2 A, 13 V, 47.2 nC Qg, TO-220-3 through-hole, -55 to 150 °C.","salesMarkdown":"## 500 V, 190 mOhm — the SMPS workhorse The 47.2 nC typical gate charge at 10 V keeps switching losses manageable in hard-switched topologies up to the 100 kHz range. It is built for the primary-side switch in 500 V-class offline power supplies — flyback converters, PFC boost stages, and half-bridge resonant converters. The TO-220-3 through-hole package (PG-TO220-3) allows direct heatsink mounting with a screw or clip, and the 127 W power dissipation at case temperature gives realistic headroom for a thermally-constrained design. Operating junction temperature spans -55 to 150 °C, covering industrial and automotive under-hood environments without derating at the high end. The 190 mOhm maximum on-resistance is specified at 6.2 A drain current with a 13 V gate drive. This Rds(on) value is the conduction-loss anchor for a 500 V part in this current class — a 6 A rms primary current at 90 % duty cycle dissipates about 6.8 W in conduction alone. Input capacitance Ciss is 1137 pF at 100 V drain-source — a moderate value that keeps the Miller plateau manageable and reduces cross-conduction risk during hard-switched transitions. The 13 V recommended drive voltage (max Rds(on) condition) aligns with standard 12 V or 15 V gate-drive rails used in offline power ICs. ## Active production, ROHS3, through-hole package It is ROHS3 compliant, free of the six restricted substances plus the four phthalates. The through-hole TO-220-3 package ships in tube form, standard for this form factor. No official successor or cross-reference is listed by Infineon. The surface-mount sibling in the same CoolMOS™ CE family — the IPD50R950CEAUMA1 — shares the same 500 V rating and gate-drive voltage but offers a higher 950 mOhm Rds(on) and lower 4.3 A current rating in a DPAK package.","metaTitle":"Infineon IPP50R190CEXKSA1 CoolMOS CE N-Ch 500V 18.5A TO-220","metaDescription":"Infineon IPP50R190CEXKSA1 N-channel MOSFET, 500V Vdss, 190mOhm Rds(on), 18.5A Id, TO-220-3. Active production, ROHS3 compliant.","metaKeywords":null},"attributes":{"series":"CoolMOS™ CE","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"CoolMOS™ CE","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Through Hole","Package / Case":"TO-220-3","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"3.5V @ 510µA","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"190mOhm @ 6.2A, 13V","Power Dissipation (Max)":"127W (Tc)","Supplier Device Package":"PG-TO220-3","Gate Charge (Qg) (Max) @ Vgs":"47.2 nC @ 10 V","Drain to Source Voltage (Vdss)":"500 V","Input Capacitance (Ciss) (Max) @ Vds":"1137 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"13V","Current - Continuous Drain (Id) @ 25°C":"18.5A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$2.05","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$2.05000","currency":"USD"},{"qty":10,"price":"$1.70100","currency":"USD"},{"qty":100,"price":"$1.35380","currency":"USD"},{"qty":500,"price":"$1.14556","currency":"USD"},{"qty":1000,"price":"$0.97198","currency":"USD"},{"qty":2000,"price":"$0.92339","currency":"USD"},{"qty":5000,"price":"$0.88867","currency":"USD"},{"qty":10000,"price":"$0.85925","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/d77194ad74275ca628b47e93aed70da5.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the Rds(on) of IPP50R190CEXKSA1?","answer":"Maximum Rds(on) is 190 mOhm at 6.2 A drain current with a 13 V gate drive. This is the conduction-loss anchor for the part in a 500 V SMPS primary-side application."},{"question":"Can IPP50R190CEXKSA1 replace a failed MOSFET in a 500V SMPS?","answer":"Yes — the 500 V Vdss, 18.5 A Id, and 190 mOhm Rds(on) make it a direct fit for the primary switch in most 500 V-class flyback, PFC boost, and half-bridge converters. Verify the gate-drive voltage (13 V recommended) and package footprint (TO-220-3) match the original part before fitting."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IPP50R190CEXKSA1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IPP50R190CEXKSA1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}