{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IPP320N20N3GXKSA1","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IPP320N20N3GXKSA1","canonicalUrl":"https://icboms.com/infineon/IPP320N20N3GXKSA1","factsUrl":"https://icboms.com/api/mcp/products/IPP320N20N3GXKSA1","rawCanonicalId":null},"summary":{"shortDescription":"Infineon OptiMOS™ IPP320N20N3GXKSA1, N-channel MOSFET, 200 V Vdss, 34 A Id, 32 mOhm Rds(on) at 10 V, 29 nC Qg, -55°C to 175°C, TO-220-3 through-hole package.","salesMarkdown":"## 200 V, 34 A N-channel — OptiMOS™ in a TO-220-3 The IPP320N20N3GXKSA1: It comes in a through-hole TO-220-3 package (PG-TO220-3), which is the standard three-lead power package for board-level or heatsink-mount switching. The 29 nC typical gate charge at 10 V means a moderate gate-drive current is sufficient for switching frequencies up to roughly 100 kHz in hard-switched topologies. ## Junction temperature range and thermal budget Maximum power dissipation is 136 W at case temperature 25°C — derating is required above that, and a heatsink is necessary for any continuous current above a few amps in still air. That matters for thermal runaway margin in a short-circuit or overload condition.","metaTitle":"Infineon IPP320N20N3GXKSA1 N-Channel MOSFET, 200 V, 34 A","metaDescription":"Infineon OptiMOS™ N-channel MOSFET, 200 V Vdss, 34 A continuous drain, 32 mOhm Rds(on) at 10 V. Active production, ROHS3 compliant.","metaKeywords":null},"attributes":{"series":"OptiMOS™","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"OptiMOS™","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Through Hole","Package / Case":"TO-220-3","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 90µA","Operating Temperature":"-55°C ~ 175°C (TJ)","Rds On (Max) @ Id, Vgs":"32mOhm @ 34A, 10V","Power Dissipation (Max)":"136W (Tc)","Supplier Device Package":"PG-TO220-3","Gate Charge (Qg) (Max) @ Vgs":"29 nC @ 10 V","Drain to Source Voltage (Vdss)":"200 V","Input Capacitance (Ciss) (Max) @ Vds":"2350 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"34A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$3.47","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$3.47000","currency":"USD"},{"qty":10,"price":"$2.91700","currency":"USD"},{"qty":100,"price":"$2.35960","currency":"USD"},{"qty":500,"price":"$2.09740","currency":"USD"},{"qty":1000,"price":"$1.79590","currency":"USD"},{"qty":2000,"price":"$1.69104","currency":"USD"},{"qty":5000,"price":"$1.62238","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/fd9d37b966a5f654fad1f82437eee726.pdf","sourceUrl":null},"ai":{"faq":[{"question":"Does IPP320N20N3GXKSA1 require a heatsink?","answer":"At 34 A continuous drain current and 32 mOhm Rds(on), the conduction loss alone is over 35 W at 25°C junction — that exceeds the TO-220-3 package's free-air dissipation capability. A heatsink is required for any continuous operation above a few amps. The maximum power dissipation is 136 W at case temperature 25°C, which assumes a heatsink with adequate thermal interface."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IPP320N20N3GXKSA1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IPP320N20N3GXKSA1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}