{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IPP200N15N3GXKSA1","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IPP200N15N3GXKSA1","canonicalUrl":"https://icboms.com/infineon/IPP200N15N3GXKSA1","factsUrl":"https://icboms.com/api/mcp/products/IPP200N15N3GXKSA1","rawCanonicalId":null},"summary":{"shortDescription":"Infineon OptiMOS™ series, N-Channel MOSFET, 150V Vdss, 50A continuous drain, 20mOhm Rds(on) at 10V, 31nC gate charge, TO-220-3 through-hole, -55°C to 175°C junction temperature.","salesMarkdown":"## On-resistance and gate drive — what they mean for the switching loop The IPP200N15N3GXKSA1: Maximum on-resistance is 20 mOhm at 50 A drain current and 10 V gate drive. ## Temperature range and thermal design Junction temperature spans -55°C to 175°C. Maximum power dissipation is 150 W at case temperature. ## Lifecycle and compliance The IPP200N15N3GXKSA1 carries an Active product status with ROHS3 compliance.","metaTitle":"Infineon IPP200N15N3GXKSA1 N-Channel MOSFET","metaDescription":"Infineon OptiMOS™ N-channel MOSFET, 150V Vdss, 50A continuous drain, 20mOhm Rds(on) at 10V. Active production, ROHS3 compliant.","metaKeywords":null},"attributes":{"series":"OptiMOS™","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"OptiMOS™","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Through Hole","Package / Case":"TO-220-3","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 90µA","Operating Temperature":"-55°C ~ 175°C (TJ)","Rds On (Max) @ Id, Vgs":"20mOhm @ 50A, 10V","Power Dissipation (Max)":"150W (Tc)","Supplier Device Package":"PG-TO220-3","Gate Charge (Qg) (Max) @ Vgs":"31 nC @ 10 V","Drain to Source Voltage (Vdss)":"150 V","Input Capacitance (Ciss) (Max) @ Vds":"1820 pF @ 75 V","Drive Voltage (Max Rds On, Min Rds On)":"8V, 10V","Current - Continuous Drain (Id) @ 25°C":"50A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$3.45","priceTiers":[{"qty":1,"price":"$3.45000","currency":"USD"},{"qty":10,"price":"$3.09700","currency":"USD"},{"qty":100,"price":"$2.53740","currency":"USD"},{"qty":500,"price":"$2.16004","currency":"USD"},{"qty":1000,"price":"$1.82172","currency":"USD"},{"qty":2000,"price":"$1.73063","currency":"USD"},{"qty":5000,"price":"$1.69725","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/e17951d42933ef7aa266d37e7866d6e2.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/IPP200N15N3GXKSA1/alternatives.json"},"ai":{"faq":[{"question":"What is the input capacitance and how does it affect switching?","answer":"Maximum input capacitance is 1820 pF at 75 V drain-source. This moderate capacitance allows direct drive from most gate driver ICs without excessive crossover current."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IPP200N15N3GXKSA1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IPP200N15N3GXKSA1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-13T21:05:34.174Z","lastPublished":"2026-07-13T21:05:34.174Z","indexable":true}}