{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IPP180N10N3GXKSA1","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IPP180N10N3GXKSA1","canonicalUrl":"https://icboms.com/infineon/IPP180N10N3GXKSA1","factsUrl":"https://icboms.com/api/mcp/products/IPP180N10N3GXKSA1","rawCanonicalId":null},"summary":{"shortDescription":"Infineon OptiMOS N-Channel MOSFET, 100V drain-to-source voltage, 43A continuous drain current, 18mOhm Rds(on) at 10V gate drive, TO-220-3 through-hole package, -55°C to 175°C junction temperature.","salesMarkdown":"## 100V, 43A N-channel MOSFET in a TO-220-3 package Gate charge is 25 nC at 10 V, and input capacitance is 1800 pF at 50 V drain-source, so the gate-drive requirement is modest for a 100 V part in this current class. The TO-220-3 through-hole package (PG-TO220-3) suits point-of-load switching, DC-DC converters, motor pre-drive stages, and secondary-side synchronous rectification. ## Rds(on) and gate-drive voltage The drive voltage range for achieving the rated Rds(on) is 6 V to 10 V.","metaTitle":"Infineon IPP180N10N3GXKSA1 N-Channel MOSFET","metaDescription":"Infineon IPP180N10N3GXKSA1 OptiMOS N-channel MOSFET, 100V drain-source, 43A continuous, 18mOhm Rds(on) at 10V. Active production, ROHS3 compliant.","metaKeywords":null},"attributes":{"series":"OptiMOS™","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"OptiMOS™","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Through Hole","Package / Case":"TO-220-3","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"3.5V @ 33µA","Operating Temperature":"-55°C ~ 175°C (TJ)","Rds On (Max) @ Id, Vgs":"18mOhm @ 33A, 10V","Power Dissipation (Max)":"71W (Tc)","Supplier Device Package":"PG-TO220-3","Gate Charge (Qg) (Max) @ Vgs":"25 nC @ 10 V","Drain to Source Voltage (Vdss)":"100 V","Input Capacitance (Ciss) (Max) @ Vds":"1800 pF @ 50 V","Drive Voltage (Max Rds On, Min Rds On)":"6V, 10V","Current - Continuous Drain (Id) @ 25°C":"43A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.23","priceTiers":[{"qty":1,"price":"$1.23000","currency":"USD"},{"qty":50,"price":"$0.98960","currency":"USD"},{"qty":100,"price":"$0.78410","currency":"USD"},{"qty":500,"price":"$0.66464","currency":"USD"},{"qty":1000,"price":"$0.54143","currency":"USD"},{"qty":2000,"price":"$0.50969","currency":"USD"},{"qty":5000,"price":"$0.48542","currency":"USD"},{"qty":10000,"price":"$0.46301","currency":"USD"}]},"links":{"datasheetUrl":null,"sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/IPP180N10N3GXKSA1/alternatives.json"},"ai":{"faq":[{"question":"What is the exact Rds(on) of IPP180N10N3GXKSA1 at 10V gate drive?","answer":"The maximum on-resistance is 18 mOhm at 10 V gate drive with 33 A drain current."},{"question":"Can IPP180N10N3GXKSA1 be used as a replacement for IRFZ44N?","answer":"The IRFZ44N is a 55 V, 49 A N-channel MOSFET in TO-220. The IPP180N10N3GXKSA1 has a higher 100 V drain-source rating and similar current capability, but the gate threshold and drive voltage differ. Check the gate-drive voltage in your design — the IPP180N10N3GXKSA1 needs 10 V for minimum Rds(on) — and verify pin compatibility (both are TO-220-3)."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IPP180N10N3GXKSA1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IPP180N10N3GXKSA1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-16T10:39:33.080Z","lastPublished":"2026-07-16T10:39:33.080Z","indexable":true}}