{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IPP114N12N3GXKSA1","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IPP114N12N3GXKSA1","canonicalUrl":"https://icboms.com/infineon/IPP114N12N3GXKSA1","factsUrl":"https://icboms.com/api/mcp/products/IPP114N12N3GXKSA1","rawCanonicalId":null},"summary":{"shortDescription":"Infineon OptiMOS™ IPP114N12N3GXKSA1, N-channel MOSFET, 120 V drain-source voltage, 75 A continuous drain current at 25°C case, 11.4 mOhm max on-resistance at 10 V gate drive, TO-220-3 through-hole package, -55°C to 175°C junction temperature.","salesMarkdown":"## 120 V, 75 A N-channel — the TO-220 workhorse for medium-voltage power stages The Infineon IPP114N12N3GXKSA1 is a 120 V, 75 A N-channel MOSFET from the OptiMOS™ series, housed in a standard TO-220-3 through-hole package. It is built for power-switching applications where low on-resistance and high current density are the primary selection criteria — think motor drives, DC-DC converters, battery protection, and industrial power supplies. The headline spec: 11.4 mOhm max Rds(on) at Vgs = 10 V and Id = 75 A. That is the number that drives the conduction loss calculation for your load current. At 75 A, the dissipation in the channel alone is I²R = 64 W — within the 136 W power dissipation rating at case temperature, but thermal management with a heatsink is mandatory. ## Gate charge and switching — what the 65 nC means for your driver Total gate charge Qg is 65 nC at Vgs = 10 V. For a 100 kHz switching frequency, the average gate drive current needed is Qg × f = 6.5 mA — easily met by most gate driver ICs. The input capacitance Ciss is 4310 pF at Vds = 60 V; that sets the switching energy per cycle and the driver's peak current requirement during the Miller plateau. The gate threshold voltage Vgs(th) is 4 V max at Id = 83 µA. That means a 5 V logic-level gate drive will not fully enhance the channel; you need the full 10 V drive to achieve the rated Rds(on). The drive voltage spec is listed as 10 V for both min and max Rds(on). ## Temperature range and thermal limits Junction temperature range is -55°C to 175°C. The 175°C ceiling is higher than the typical 150°C limit for many MOSFETs, giving extra headroom in high-ambient environments like engine compartments or sealed industrial enclosures. Power dissipation is rated at 136 W at case temperature Tc — that assumes the case is held at 25°C; real-world derating follows the datasheet curve. ## Sourcing and lifecycle — no redesign risk here Lifecycle status is Active — no NRND or EOL flags. The part is ROHS3 compliant. ## Package and mounting — through-hole for heatsink attachment The TO-220-3 package (Infineon designation PG-TO220-3) is a through-hole, three-lead format with a metal tab for bolting to a heatsink. Mounting type is through hole; the tab is electrically common with the drain. Standard 0.100-inch pitch leads fit a 0.040-inch drilled hole on a 2.54 mm grid.","metaTitle":"IPP114N12N3GXKSA1 MOSFET N-CH 120V 75A TO-220-3 OptiMOS","metaDescription":"Infineon IPP114N12N3GXKSA1 N-channel MOSFET, 120V Vdss, 75A Id, 11.4mOhm Rds(on) at 10V. TO-220-3, -55°C to 175°C. Active, RoHS3 compliant.","metaKeywords":null},"attributes":{"series":"OptiMOS™","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"OptiMOS™","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Through Hole","Package / Case":"TO-220-3","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 83µA","Operating Temperature":"-55°C ~ 175°C (TJ)","Rds On (Max) @ Id, Vgs":"11.4mOhm @ 75A, 10V","Power Dissipation (Max)":"136W (Tc)","Supplier Device Package":"PG-TO220-3","Gate Charge (Qg) (Max) @ Vgs":"65 nC @ 10 V","Drain to Source Voltage (Vdss)":"120 V","Input Capacitance (Ciss) (Max) @ Vds":"4310 pF @ 60 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"75A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$2.33","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$2.33000","currency":"USD"},{"qty":10,"price":"$1.93700","currency":"USD"},{"qty":100,"price":"$1.54190","currency":"USD"},{"qty":500,"price":"$1.30470","currency":"USD"},{"qty":1000,"price":"$1.10702","currency":"USD"},{"qty":2000,"price":"$1.05167","currency":"USD"},{"qty":5000,"price":"$1.01213","currency":"USD"},{"qty":10000,"price":"$0.97863","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/b242b285257acb7e6cb423fcb1869222.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the Rds(on) of IPP114N12N3GXKSA1 at 10V?","answer":"The maximum Rds(on) is 11.4 mOhm at Id = 75 A and Vgs = 10 V. This is the on-resistance at the rated drive condition — expect it to increase with junction temperature per the normalised curve in the datasheet."},{"question":"Is IPP114N12N3GXKSA1 RoHS compliant?","answer":"Yes, it is ROHS3 compliant."},{"question":"Can IPP114N12N3GXKSA1 replace IPP114N12N3?","answer":"The IPP114N12N3GXKSA1 is the current suffix variant of the base IPP114N12N3. The suffix indicates packaging and reel/tube configuration differences, not a functional change. Check the specific suffix for your BOM — the GXKSA1 suffix corresponds to the tube (bulk) package. Electrical ratings are identical."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IPP114N12N3GXKSA1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IPP114N12N3GXKSA1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}