{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IPP110N20NAAKSA1","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IPP110N20NAAKSA1","canonicalUrl":"https://icboms.com/infineon/IPP110N20NAAKSA1","factsUrl":"https://icboms.com/api/mcp/products/IPP110N20NAAKSA1","rawCanonicalId":null},"summary":{"shortDescription":"Infineon OptimWatt™ IPP110N20NAAKSA1, N-Channel MOSFET, 200 V Vdss, 88 A Id, 10.7 mOhm Rds(on) max at 10 V, 87 nC Qg, TO-220-3 through-hole, -55 to 175 °C junction.","salesMarkdown":"## 200 V, 88 A, TO-220-3 — the workhorse power switch The IPP110N20NAAKSA1: It comes in a through-hole TO-220-3 package (PG-TO220-3), the standard three-lead power package that bolts to a heatsink or chassis and swaps with a screwdriver on site — no hot-air station needed. ## On-resistance and gate charge — the switching budget Gate charge totals 87 nC at 10 V. ## 175°C junction — industrial and harsh environments The 300 W power dissipation rating at case temperature is achievable with an aggressive heatsink. ## Active production and compliance The through-hole TO-220 package is widely stocked and easy to hand-solder or socket in a repair scenario.","metaTitle":"Infineon IPP110N20NAAKSA1 MOSFET, N-Ch 200V 88A TO-220-3","metaDescription":"Infineon IPP110N20NAAKSA1 N-channel MOSFET, 200V Vdss, 88A Id, 10.7mOhm Rds(on) max, TO-220-3. Active production. ROHS3 compliant.","metaKeywords":null},"attributes":{"series":"OptimWatt™","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"OptimWatt™","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Through Hole","Package / Case":"TO-220-3","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 270µA","Operating Temperature":"-55°C ~ 175°C (TJ)","Rds On (Max) @ Id, Vgs":"10.7mOhm @ 88A, 10V","Power Dissipation (Max)":"300W (Tc)","Supplier Device Package":"PG-TO220-3","Gate Charge (Qg) (Max) @ Vgs":"87 nC @ 10 V","Drain to Source Voltage (Vdss)":"200 V","Input Capacitance (Ciss) (Max) @ Vds":"7100 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"88A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$10.74","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$10.74000","currency":"USD"},{"qty":10,"price":"$9.70600","currency":"USD"},{"qty":100,"price":"$8.03530","currency":"USD"},{"qty":500,"price":"$6.99702","currency":"USD"},{"qty":1000,"price":"$6.09418","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/012f2fa5219a90dd85168e867ab4ed2b.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the Rds(on) of IPP110N20NAAKSA1?","answer":"The maximum on-resistance is 10.7 mOhm at 88 A drain current with a 10 V gate-to-source drive. That figure is the worst-case across the operating temperature range; typical values at 25°C are lower."},{"question":"What is the gate charge of IPP110N20NAAKSA1?","answer":"Total gate charge (Qg) is 87 nC maximum at a 10 V gate drive. This is the charge the gate driver must deliver to turn the MOSFET fully on; it sets the switching speed and driver dissipation."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IPP110N20NAAKSA1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IPP110N20NAAKSA1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}