{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IPP100N12S305AKSA1","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IPP100N12S305AKSA1","canonicalUrl":"https://icboms.com/infineon/IPP100N12S305AKSA1","factsUrl":"https://icboms.com/api/mcp/products/IPP100N12S305AKSA1","rawCanonicalId":null},"summary":{"shortDescription":"Infineon OptiMOS™ IPP100N12S305AKSA1, N-Channel MOSFET, 120 V drain-source, 100 A continuous, 5.1 mOhm Rds(on) at 10 V, TO-220-3, AEC-Q101 qualified, -55°C to 175°C junction temperature.","salesMarkdown":"## Through-hole N-channel for high-current automotive loads The TO-220-3 through-hole package handles the 300 W power dissipation with an adequate heatsink, making this part a candidate for high-current switching in automotive power distribution, DC-DC converters, and motor-drive pre-drive stages. ## 5.1 mOhm Rds(on) — conduction loss floor At 100 A, conduction loss is 51 W (I² × R) at the worst-case Rds(on); the actual die temperature rise will increase Rds(on) above the 25°C value per the normalised curve in the datasheet, so the thermal budget must be calculated at the operating junction temperature. ## Gate drive and switching budget Maximum gate charge at 10 V is 185 nC; input capacitance is 11570 pF at 25 V drain-source. A 10 V gate drive is required for the rated Rds(on). The high gate charge means the driver must source enough peak current to meet the target switching frequency — a 185 nC gate switched at 20 kHz requires an average gate current of 3.7 mA, but the peak current during the Miller plateau is significantly higher and determines the driver's capability.","metaTitle":"Infineon IPP100N12S305AKSA1 N-Channel MOSFET, 120 V, 100 A","metaDescription":"Infineon OptiMOS™ IPP100N12S305AKSA1 N-Channel MOSFET, 120 V drain-source, 100 A continuous, 5.1 mOhm Rds(on) at 10 V. AEC-Q101 qualified. Active lifecycle.","metaKeywords":null},"attributes":{"series":"OptiMOS™","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Grade":"Automotive","Series":"OptiMOS™","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Through Hole","Qualification":"AEC-Q101","Package / Case":"TO-220-3","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 240µA","Operating Temperature":"-55°C ~ 175°C (TJ)","Rds On (Max) @ Id, Vgs":"5.1mOhm @ 100A, 10V","Power Dissipation (Max)":"300W (Tc)","Supplier Device Package":"PG-TO220-3-1","Gate Charge (Qg) (Max) @ Vgs":"185 nC @ 10 V","Drain to Source Voltage (Vdss)":"120 V","Input Capacitance (Ciss) (Max) @ Vds":"11570 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"100A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$5.3","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$5.30000","currency":"USD"},{"qty":10,"price":"$4.45000","currency":"USD"},{"qty":100,"price":"$3.59960","currency":"USD"},{"qty":500,"price":"$3.19968","currency":"USD"},{"qty":1000,"price":"$2.73973","currency":"USD"},{"qty":2000,"price":"$2.57974","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/02170ccc692d36e446b4106af2157bbf.pdf","sourceUrl":null},"ai":{"faq":[{"question":"Is IPP100N12S305AKSA1 automotive qualified?","answer":"Yes, it is AEC-Q101 qualified and listed with an Automotive grade."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IPP100N12S305AKSA1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IPP100N12S305AKSA1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}