{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IPP065N04NG","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IPP065N04NG","canonicalUrl":"https://icboms.com/infineon/IPP065N04NG","factsUrl":"https://icboms.com/api/mcp/products/IPP065N04NG","rawCanonicalId":null},"summary":{"shortDescription":"Infineon OptiMOS™ IPP065N04NG, N-Channel MOSFET, 40 V Vdss, 50 A continuous drain, 6.5 mOhm Rds(on) at 10 V, 34 nC gate charge, TO-220-3 package, -55°C to 175°C junction temperature.","salesMarkdown":"## Gate charge and switching budget Total gate charge is 34 nC at 10 V. For a 100 kHz switching frequency, the average gate-drive current needed is 3.4 mA, well within the capability of a standard MOSFET driver. The 2800 pF input capacitance at 20 V drain-source helps estimate the switching loss: the driver must charge and discharge this capacitance each cycle, so higher frequencies increase the driver's power dissipation. ## 175°C junction — high-temp margin The 4 V maximum gate threshold at 200 µA drain current ensures the device turns on fully with a standard 10 V gate drive, even at elevated temperature where Vgs(th) drops. ## Through-hole TO-220 — thermal and mechanical fit The PG-TO220-3 package (standard TO-220 outline) mounts through a single hole in the PCB or heatsink, with the tab soldered to the copper island for thermal transfer. The 68 W power dissipation at case temperature assumes the tab is bolted to an infinite heatsink; in practice, derate according to the thermal resistance junction-to-case (not listed here, but typical for TO-220 is ~1–2 °C/W). ## Active production — no LTB concern ROHS3 compliant.","metaTitle":"Infineon IPP065N04NG OptiMOS N-Channel MOSFET, 40 V","metaDescription":"Infineon IPP065N04NG OptiMOS N-channel power MOSFET, 40 V, 50 A, 6.5 mOhm Rds(on) at 10 V, TO-220-3, active production, ROHS3 compliant.","metaKeywords":null},"attributes":{"series":"OptiMOS™","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"OptiMOS™","Package":"Bulk","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Through Hole","Package / Case":"TO-220-3","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 200µA","Operating Temperature":"-55°C ~ 175°C (TJ)","Rds On (Max) @ Id, Vgs":"6.5mOhm @ 50A, 10V","Power Dissipation (Max)":"68W (Tc)","Supplier Device Package":"PG-TO220-3","Gate Charge (Qg) (Max) @ Vgs":"34 nC @ 10 V","Drain to Source Voltage (Vdss)":"40 V","Input Capacitance (Ciss) (Max) @ Vds":"2800 pF @ 20 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"50A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.35","stockQuantity":0,"priceTiers":[{"qty":866,"price":"$0.35000","currency":"USD"}]},"links":{"datasheetUrl":"https://rocelec.widen.net/view/pdf/eji6pvzali/INFNS15858-1.pdf?t.download=true&u=5oefqw","sourceUrl":null},"ai":{"faq":[{"question":"What is the maximum Rds(on) and gate charge of IPP065N04NG?","answer":"Maximum Rds(on) is 6.5 mOhm at 50 A drain current and 10 V gate drive."},{"question":"Is IPP065N04NG RoHS compliant?","answer":"Yes, it is ROHS3 compliant per Infineon's listing."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IPP065N04NG","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IPP065N04NG when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}