{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IPP041N04NGXKSA1","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IPP041N04NGXKSA1","canonicalUrl":"https://icboms.com/infineon/IPP041N04NGXKSA1","factsUrl":"https://icboms.com/api/mcp/products/IPP041N04NGXKSA1","rawCanonicalId":null},"summary":{"shortDescription":"Infineon OptiMOS™ IPP041N04NGXKSA1, N-channel MOSFET, 40 V drain-source, 80 A continuous drain, 4.1 mOhm Rds(on) at 10 V, TO-220-3 through-hole package, -55°C to 175°C junction temperature.","salesMarkdown":"## 40 V, 80 A N-channel in a TO-220 — field-swappable power switch The IPP041N04NGXKSA1: It comes in a through-hole TO-220-3 package (PG-TO220-3-1), which means you can bolt it to a heatsink and swap it on site with basic hand tools — no hot-air station or reflow oven needed. Total gate charge is 56 nC at 10 V. Input capacitance Ciss is 4500 pF at 20 V drain-source — the gate-driver output impedance should be low enough to charge this capacitance within the desired dead-time window. ## Temperature range and environment Maximum power dissipation is 94 W at case temperature 25°C — the limiting factor in practice is the heatsink thermal resistance, not the silicon. ## Lifecycle and sourcing It is ROHS3 compliant.","metaTitle":"Infineon IPP041N04NGXKSA1 N-Channel MOSFET, 40V 80A TO-220","metaDescription":"Infineon OptiMOS™ N-channel MOSFET, 40V drain-source, 80A continuous drain, 4.1mOhm Rds(on) at 10V. Active production, TO-220-3 through-hole package.","metaKeywords":null},"attributes":{"series":"OptiMOS™","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"OptiMOS™","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Through Hole","Package / Case":"TO-220-3","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 45µA","Operating Temperature":"-55°C ~ 175°C (TJ)","Rds On (Max) @ Id, Vgs":"4.1mOhm @ 80A, 10V","Power Dissipation (Max)":"94W (Tc)","Supplier Device Package":"PG-TO220-3-1","Gate Charge (Qg) (Max) @ Vgs":"56 nC @ 10 V","Drain to Source Voltage (Vdss)":"40 V","Input Capacitance (Ciss) (Max) @ Vds":"4500 pF @ 20 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"80A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.64","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$1.64000","currency":"USD"},{"qty":10,"price":"$1.46800","currency":"USD"},{"qty":100,"price":"$1.14420","currency":"USD"},{"qty":500,"price":"$0.94524","currency":"USD"},{"qty":1000,"price":"$0.74624","currency":"USD"},{"qty":2000,"price":"$0.69649","currency":"USD"},{"qty":5000,"price":"$0.66166","currency":"USD"},{"qty":10000,"price":"$0.64890","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/044569581aa31aaf2ca0489b5f57c665.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the Rds(on) of IPP041N04NGXKSA1 at 10V?","answer":"The maximum on-resistance is 4.1 mOhm at 80 A drain current with 10 V gate drive. Typical values are lower; the datasheet curve shows the temperature dependence."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IPP041N04NGXKSA1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IPP041N04NGXKSA1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}