{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IPP040N06NAKSA1","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IPP040N06NAKSA1","canonicalUrl":"https://icboms.com/infineon/IPP040N06NAKSA1","factsUrl":"https://icboms.com/api/mcp/products/IPP040N06NAKSA1","rawCanonicalId":null},"summary":{"shortDescription":"Infineon OptiMOS N-Channel MOSFET, 60V Vdss, 80A Id at Tc, 4mOhm Rds(on) at 10V, 38nC Qg, -55 to 175°C, TO-220-3 package.","salesMarkdown":"## 60 V N-channel in a TO-220 — the OptiMOS power switch for 48 V bus rails The Infineon IPP040N06NAKSA1 is a 60 V N-channel MOSFET from the OptiMOS series, rated for 80 A continuous drain current at the case and 20 A at ambient. The 4 mOhm maximum on-resistance at a 10 V gate drive is the key figure for conduction-loss budgeting in a 48 V nominal bus converter, motor drive, or high-current load switch. The TO-220-3 through-hole package (PG-TO220-3 supplier code) has a metal tab that is electrically the drain terminal. That means the heatsink must either be electrically isolated from the chassis or share the drain potential — a common consideration when bolting the tab to a grounded enclosure. ## On-resistance, gate charge, and the drive voltage window The Rds(on) of 4 mOhm is specified at Id = 80 A and Vgs = 10 V, with the drive voltage range spanning 6 V to 10 V for achieving the minimum on-resistance. A gate driver that cannot swing to 10 V leaves part of the Rds(on) improvement on the table — the 6 V minimum is the floor for the device to turn on hard, but the 10 V level is where the datasheet guarantees the 4 mOhm figure. Total gate charge is 38 nC at a 10 V gate drive. At a 100 kHz switching frequency the average gate-drive current needed is about 3.8 mA, which any standard MOSFET driver handles. The practical limit is the peak current during the Miller plateau — the driver must source enough instantaneous current to charge that 38 nC within the desired switching transition time, typically a few tens of nanoseconds. Input capacitance Ciss is 2700 pF measured at Vds = 30 V, which together with the gate charge gives the designer the numbers for calculating the driver's switching loss and the gate-resistor value for slew-rate control. ## Junction temperature and thermal design The TO-220-3 tab is the primary thermal path. Bolting it to a heatsink with thermal compound is standard practice; the tab-to-heatsink thermal resistance determines how much of the 107 W case dissipation can actually be pulled out of the device. ## Active lifecycle and channel posture Sourced to order against the BOM quantity through independent distribution.","metaTitle":"Infineon IPP040N06NAKSA1 OptiMOS N-Channel 60V 80A MOSFET","metaDescription":"Infineon IPP040N06NAKSA1 OptiMOS N-channel MOSFET, 60V Vdss, 80A Id, 4mOhm Rds(on) at 10V. TO-220-3 package. Active lifecycle, ROHS3 compliant.","metaKeywords":null},"attributes":{"series":"OptiMOS™","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"OptiMOS™","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Through Hole","Package / Case":"TO-220-3","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"2.8V @ 50µA","Operating Temperature":"-55°C ~ 175°C (TJ)","Rds On (Max) @ Id, Vgs":"4mOhm @ 80A, 10V","Power Dissipation (Max)":"3W (Ta), 107W (Tc)","Supplier Device Package":"PG-TO220-3","Gate Charge (Qg) (Max) @ Vgs":"38 nC @ 10 V","Drain to Source Voltage (Vdss)":"60 V","Input Capacitance (Ciss) (Max) @ Vds":"2700 pF @ 30 V","Drive Voltage (Max Rds On, Min Rds On)":"6V, 10V","Current - Continuous Drain (Id) @ 25°C":"20A (Ta), 80A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$2.0","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$2.38000","currency":"USD"},{"qty":10,"price":"$2.13400","currency":"USD"},{"qty":100,"price":"$1.71510","currency":"USD"},{"qty":500,"price":"$1.40910","currency":"USD"},{"qty":1000,"price":"$1.17425","currency":"USD"}]},"links":{"datasheetUrl":"https://www.infineon.com/dgdl/IPP040N06N_Rev2.0.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30433727a44301372bbaa5ad4942","sourceUrl":null},"ai":{"faq":[{"question":"Can the IPP040N06NAKSA1 replace the IRFZ44N?","answer":"The IRFZ44N is a 55 V / 49 A N-channel MOSFET in a TO-220 package with a typical Rds(on) around 17.5 mOhm. The IPP040N06NAKSA1 has a higher drain rating (60 V / 80 A) and significantly lower on-resistance (4 mOhm). While both are N-channel TO-220 parts, the gate-drive voltage and switching characteristics differ — verify the gate-driver output swing and the switching speed requirements in your circuit before substituting."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IPP040N06NAKSA1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IPP040N06NAKSA1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}