{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IPP016N08NF2SAKMA1","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IPP016N08NF2SAKMA1","canonicalUrl":"https://icboms.com/infineon/IPP016N08NF2SAKMA1","factsUrl":"https://icboms.com/api/mcp/products/IPP016N08NF2SAKMA1","rawCanonicalId":null},"summary":{"shortDescription":"Infineon StrongIRFET™ 2 N-Channel MOSFET, 80 V Vdss, 1.6 mOhm Rds(on) max at 10 V, 196 A continuous drain at Tc, TO-220-3 through-hole package, -55 to 175 °C junction temperature.","salesMarkdown":"## 80 V, 1.6 mΩ — the conduction-loss story The Infineon IPP016N08NF2SAKMA1 is an N-channel MOSFET from the StrongIRFET™ 2 family, built on a trench technology rated for 40 to 100 V. Its headline figure is a maximum Rds(on) of 1.6 mΩ at a 10 V gate drive with 100 A of drain current — a number that tells you the conduction loss at full load will be under 16 W before thermal derating. The 80 V drain-to-source rating places it in the sweet spot for 48 V telecom rectifiers, 24 V automotive systems, and battery-management contactor circuits where the rail sees transients above 60 V. ## Current rating — package versus die Two continuous-drain figures are listed: 35 A at 25 °C when the case is at ambient (Ta), and 196 A at 25 °C when the case is held at 25 °C (Tc). The 35 A Ta number is what you size the PCB copper and airflow for in a real enclosure; the 196 A Tc number tells you what the die can pass if you bolt the TO-220-3 tab to a heatsink with forced air or liquid cooling. The package's rated power dissipation is 300 W at Tc and 3.8 W at Ta — a 78:1 ratio that makes the thermal interface the deciding factor in any high-current design. ## Gate drive and switching budget The gate charge is 255 nC at a 10 V gate drive, which is substantial — expect the gate driver to supply several amperes peak if you need fast turn-on for hard-switching at 50 kHz or above. The input capacitance is 12000 pF at 40 V drain bias, and the threshold voltage maximum is 3.8 V at 267 µA. The drive voltage range for achieving the minimum and maximum Rds(on) is 6 V to 10 V, meaning a 5 V logic-level gate signal will not fully enhance the channel; the part is designed for a 10 V gate rail, or at least 6 V, to hit the rated on-resistance. ## Temperature range and deployment context The junction temperature range is -55 to 175 °C, which covers military and automotive under-hood environments. The 175 °C max junction allows the die to run hot in a sealed enclosure or near an engine block, but the 300 W Tc dissipation rating assumes the case stays at 25 °C — in practice, derate the power linearly above 25 °C case temperature. The ±20 V maximum gate-to-source rating is standard for this voltage class. ## Package and mounting The IPP016N08NF2SAKMA1 comes in a PG-TO220-3 through-hole package — the standard three-lead TO-220 with a metal tab for screw-mount or clip heatsinking. Through-hole mounting is preferred for high-power designs where the leads carry the full drain current and the tab needs a thermal path to the chassis or heatsink.","metaTitle":"Infineon IPP016N08NF2SAKMA1 N-Channel MOSFET, 80V, 1.6mΩ","metaDescription":"Infineon StrongIRFET™ 2 N-Channel MOSFET, 80V Vdss, 1.6mΩ Rds(on) at 10V, 196A continuous drain at Tc. TO-220-3. Active lifecycle.","metaKeywords":null},"attributes":{"series":"StrongIRFET™ 2","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":["Logic ICs"],"specifications":{"Series":"StrongIRFET™ 2","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Through Hole","Package / Case":"TO-220-3","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"3.8V @ 267µA","Operating Temperature":"-55°C ~ 175°C (TJ)","Rds On (Max) @ Id, Vgs":"1.6mOhm @ 100A, 10V","Power Dissipation (Max)":"3.8W (Ta), 300W (Tc)","Supplier Device Package":"PG-TO220-3","Gate Charge (Qg) (Max) @ Vgs":"255 nC @ 10 V","Drain to Source Voltage (Vdss)":"80 V","Input Capacitance (Ciss) (Max) @ Vds":"12000 pF @ 40 V","Drive Voltage (Max Rds On, Min Rds On)":"6V, 10V","Current - Continuous Drain (Id) @ 25°C":"35A (Ta), 196A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$4.11","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$4.11000","currency":"USD"},{"qty":10,"price":"$3.69500","currency":"USD"},{"qty":100,"price":"$3.02720","currency":"USD"},{"qty":500,"price":"$2.57696","currency":"USD"},{"qty":1000,"price":"$2.17334","currency":"USD"},{"qty":2000,"price":"$2.06467","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/72fa1fd9e3b3742632450fbde4b2b873.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the maximum Rds(on) of the IPP016N08NF2SAKMA1 at 10 V?","answer":"At a 6 V gate drive the Rds(on) will be higher — the part is optimised for a 10 V gate rail."},{"question":"What are the direct equivalents of the IPP016N08NF2SAKMA1?","answer":"For dual-sourcing, consult the StrongIRFET™ 2 family datasheet for devices with similar Rds(on), Vdss, and package ratings."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IPP016N08NF2SAKMA1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IPP016N08NF2SAKMA1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}