{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IPN60R3K4CEATMA1","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IPN60R3K4CEATMA1","canonicalUrl":"https://icboms.com/infineon/IPN60R3K4CEATMA1","factsUrl":"https://icboms.com/api/mcp/products/IPN60R3K4CEATMA1","rawCanonicalId":null},"summary":{"shortDescription":"Infineon CoolMOS™ CE, IPN60R3K4CEATMA1, N-Channel MOSFET, 600 V Vdss, 2.6 A Id, 3.4 Ohm Rds(on) @ 500 mA, 10 V, 4.6 nC Qg, PG-SOT223-3, -40 to 150 °C.","salesMarkdown":"The IPN60R3K4CEATMA1: With a gate charge of only 4.6 nC at 10 V, the gate drive energy per switching cycle is low enough that a simple logic-level PWM output from a controller IC can drive it directly in many designs, saving a dedicated gate-driver BOM line. ## Rework and board-fit notes for the SOT223 package The PG-SOT223-3 package has a large drain tab on the bottom. The 5 W dissipation ceiling requires a low-thermal-resistance path from the drain tab to a copper plane.","metaTitle":"IPN60R3K4CEATMA1 CoolMOS CE N-Ch 600V 2.6A SOT223","metaDescription":"IPN60R3K4CEATMA1 N-channel 600V 2.6A MOSFET in PG-SOT223-3. 3.4 Ohm Rds(on), 4.6 nC gate charge. Active product, ROHS3 compliant. Available to order.","metaKeywords":null},"attributes":{"series":"CoolMOS™ CE","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"CoolMOS™ CE","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","Package / Case":"TO-261-4, TO-261AA","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"3.5V @ 40µA","Operating Temperature":"-40°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"3.4Ohm @ 500mA, 10V","Power Dissipation (Max)":"5W (Tc)","Supplier Device Package":"PG-SOT223-3","Gate Charge (Qg) (Max) @ Vgs":"4.6 nC @ 10 V","Drain to Source Voltage (Vdss)":"600 V","Input Capacitance (Ciss) (Max) @ Vds":"93 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"2.6A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.49","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$0.49000","currency":"USD"},{"qty":10,"price":"$0.41600","currency":"USD"},{"qty":100,"price":"$0.28890","currency":"USD"},{"qty":500,"price":"$0.22554","currency":"USD"},{"qty":1000,"price":"$0.18332","currency":"USD"},{"qty":3000,"price":"$0.16387","currency":"USD"},{"qty":6000,"price":"$0.15554","currency":"USD"},{"qty":9000,"price":"$0.14443","currency":"USD"},{"qty":30000,"price":"$0.14110","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/2645492b2ab7732ebbf111f977c50bbc.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What gate drive voltage does IPN60R3K4CEATMA1 need for minimum Rds(on)?","answer":"The on-resistance is specified at 10 V gate drive. The maximum gate-source voltage rating is ±20 V, so the part can be driven from a standard 12 V gate-drive rail or a logic-level PWM output stepped up through a bootstrap circuit."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IPN60R3K4CEATMA1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IPN60R3K4CEATMA1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}