{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IPN50R2K0CEATMA1","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IPN50R2K0CEATMA1","canonicalUrl":"https://icboms.com/infineon/IPN50R2K0CEATMA1","factsUrl":"https://icboms.com/api/mcp/products/IPN50R2K0CEATMA1","rawCanonicalId":null},"summary":{"shortDescription":"Infineon CoolMOS™ CE IPN50R2K0CEATMA1, N-Channel MOSFET, 500 Vdss, 3.6 A Id, 2 Ohm Rds(on) at 600 mA, 13 Vgs, PG-SOT223-3 package, -40 to 150 °C junction.","salesMarkdown":"## 500 V switching in a SOT-223 — what it buys the BOM The PG-SOT223-3 package is a surface-mount footprint that fits standard reflow profiles, but the 5 W dissipation ceiling means the real-world continuous current is derated significantly above 25°C. For a 500 V device in this small outline, the die-to-ambient thermal path is the binding constraint — not the silicon rating. ## Gate drive and switching — the 6 nC advantage With a typical gate charge of 6 nC at 10 V, this MOSFET presents a light load to the gate driver. A small-signal PWM controller output can drive it directly without a dedicated driver stage, which simplifies the BOM for low-power flyback converters and auxiliary supplies. The input capacitance is 124 pF at 100 V drain-source, keeping the switching node capacitance low for clean waveform edges. The gate threshold voltage is specified at 3.5 V maximum with 50 µA drain current, so a 5 V logic-level gate drive will turn the device on, but the 13 V drive voltage is needed to achieve the rated 2 Ohm Rds(on). ## Temperature range and package reality The PG-SOT223-3 package has a standard pinout: gate on pin 1, source on pins 2 and 4 (internally common), drain on pin 3. The exposed drain tab on the top of the package is the primary thermal path — the PCB copper area under the tab sets the junction-to-ambient thermal resistance. The ±20 V maximum gate-source rating provides a comfortable margin above the 13 V drive level, reducing the risk of gate oxide damage from ringing on the gate node. ## Lifecycle and sourcing The part is ROHS3 compliant. Sourced through independent distribution. No stock-holding claim is made here; the part is quoted to order per RFQ.","metaTitle":"Infineon IPN50R2K0CEATMA1 CoolMOS CE N-Ch 500V 3.6A SOT223","metaDescription":"Infineon IPN50R2K0CEATMA1 N-channel 500V 3.6A MOSFET in PG-SOT223-3. 2 Ohm Rds(on), 6 nC gate charge, 150°C junction. Active production, RoHS3.","metaKeywords":null},"attributes":{"series":"CoolMOS™ CE","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"CoolMOS™ CE","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","Package / Case":"TO-261-4, TO-261AA","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"3.5V @ 50µA","Operating Temperature":"-40°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"2Ohm @ 600mA, 13V","Power Dissipation (Max)":"5W (Tc)","Supplier Device Package":"PG-SOT223-3","Gate Charge (Qg) (Max) @ Vgs":"6 nC @ 10 V","Drain to Source Voltage (Vdss)":"500 V","Input Capacitance (Ciss) (Max) @ Vds":"124 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"13V","Current - Continuous Drain (Id) @ 25°C":"3.6A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.49","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$0.49000","currency":"USD"},{"qty":10,"price":"$0.42200","currency":"USD"},{"qty":100,"price":"$0.29310","currency":"USD"},{"qty":500,"price":"$0.22882","currency":"USD"},{"qty":1000,"price":"$0.18598","currency":"USD"},{"qty":3000,"price":"$0.16626","currency":"USD"},{"qty":6000,"price":"$0.15780","currency":"USD"},{"qty":9000,"price":"$0.14653","currency":"USD"},{"qty":30000,"price":"$0.14315","currency":"USD"}]},"links":{"datasheetUrl":"https://www.infineon.com/dgdl/Infineon-IPN50R2K0CE-DS-v02_01-EN.pdf?fileId=5546d46253f6505701547ac89b1f5aaa","sourceUrl":null},"ai":{"faq":[{"question":"What is the closest functional alternative to IPN50R2K0CEATMA1?","answer":"The IPD50R950CEAUMA1 is a same-family CoolMOS™ CE N-channel MOSFET with a 950 mOhm Rds(on) and 4.3 A continuous drain current, in a DPAK (TO-252) package. It offers lower on-resistance and higher current capability at the same 500 V rating, but the DPAK footprint is larger than the SOT-223. It is a direct parametric step-up for designs needing more current headroom."},{"question":"Is IPN50R2K0CEATMA1 RoHS compliant?","answer":"Yes. The part is listed as ROHS3 compliant."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IPN50R2K0CEATMA1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IPN50R2K0CEATMA1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}