{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IPN50R1K4CEATMA1","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IPN50R1K4CEATMA1","canonicalUrl":"https://icboms.com/infineon/IPN50R1K4CEATMA1","factsUrl":"https://icboms.com/api/mcp/products/IPN50R1K4CEATMA1","rawCanonicalId":null},"summary":{"shortDescription":"Infineon CoolMOS™ CE series, IPN50R1K4CEATMA1, N-Channel MOSFET, 500 V Vdss, 4.8 A Id, 1.4 Ohm Rds(on) at 13 V gate drive, PG-SOT223-3 surface-mount package, -40°C to 150°C junction temperature.","salesMarkdown":"## 500 V, 4.8 A CoolMOS CE in a compact SOT223 It packs a 1.4 Ohm maximum on-resistance — specified at 900 mA drain current with 13 V gate drive — into the PG-SOT223-3 surface-mount footprint. The 150°C maximum junction temperature gives headroom for hot environments like enclosed industrial PSUs or LED drivers. The 1.4 Ohm Rds(on) at 13 V gate drive is the figure to use for conduction-loss calculations at the nominal operating point. At 900 mA, that is about 1.1 W of conduction loss — well within the 5 W package limit, but the junction temperature rise will cut into that margin as ambient climbs. The total gate charge of 8.2 nC at 10 V means a modest gate driver can switch this FET at 100 kHz with under 1 mA average drive current; switching losses stay low enough for most flyback and single-switch forward topologies. Input capacitance is 178 pF at 100 V drain bias — a light load on the driver, and the Miller plateau will be short, which helps keep the turn-on and turn-off delays in the tens of nanoseconds range. For a 100 kHz hard-switched design, the crossover losses will be dominated by the output capacitance (Coss) rather than the gate charge, so plan for a snubber or a valley-switching controller if efficiency targets are tight. ## Package thermal reality — SOT223 at 5 W The PG-SOT223-3 package is rated for 5 W total power dissipation at the case. That is a firm ceiling — the copper pad area on the PCB under the drain tab sets the actual thermal resistance. For continuous operation at 4.8 A, the conduction loss alone will push past 5 W unless the Rds(on) is de-rated for temperature (it roughly doubles at 150°C junction). In practice, this part is run at 1-2 A continuous with good PCB heatsinking, or used in pulsed applications like inrush limiting. The 150°C ceiling is a hard stop — the plastic SOT223 will not survive sustained operation above that, and the solder joints fatigue faster at the high end of the range. Keep the junction below 125°C for reliability in long-life designs. ## Sourcing and lifecycle posture Infineon continues to manufacture the CoolMOS CE series in the SOT223 package. No known PCN on this specific variant; the date-code and marking traceability back to Infineon's fabs is clean through the authorized channel.","metaTitle":"Infineon IPN50R1K4CEATMA1 N-Channel MOSFET, 500V 4.8A SOT223","metaDescription":"Infineon CoolMOS CE N-channel MOSFET, 500V Vdss, 4.8A Id, 1.4 Ohm Rds(on) at 13V gate. PG-SOT223-3 package. Active lifecycle.","metaKeywords":null},"attributes":{"series":"CoolMOS™ CE","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"CoolMOS™ CE","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","Package / Case":"TO-261-4, TO-261AA","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"3.5V @ 70µA","Operating Temperature":"-40°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"1.4Ohm @ 900mA, 13V","Power Dissipation (Max)":"5W (Tc)","Supplier Device Package":"PG-SOT223-3","Gate Charge (Qg) (Max) @ Vgs":"8.2 nC @ 10 V","Drain to Source Voltage (Vdss)":"500 V","Input Capacitance (Ciss) (Max) @ Vds":"178 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"13V","Current - Continuous Drain (Id) @ 25°C":"4.8A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.6","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$0.60000","currency":"USD"},{"qty":10,"price":"$0.51200","currency":"USD"},{"qty":100,"price":"$0.35600","currency":"USD"},{"qty":500,"price":"$0.27798","currency":"USD"},{"qty":1000,"price":"$0.22594","currency":"USD"},{"qty":3000,"price":"$0.20198","currency":"USD"},{"qty":6000,"price":"$0.19171","currency":"USD"},{"qty":9000,"price":"$0.17802","currency":"USD"},{"qty":30000,"price":"$0.17391","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/acf7b28a01205f8e627eccc6874f1e90.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the Rds(on) of IPN50R1K4CEATMA1?","answer":"Maximum on-resistance is 1.4 Ohm, specified at 900 mA drain current with 13 V gate-to-source drive. This is the value to use for worst-case conduction loss calculations at 25°C junction; expect Rds(on) to approximately double at 150°C junction."},{"question":"What is the gate charge of IPN50R1K4CEATMA1?","answer":"Total gate charge is 8.2 nC maximum at 10 V gate drive. This low Qg keeps switching losses manageable in hard-switched topologies up to several hundred kHz."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IPN50R1K4CEATMA1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IPN50R1K4CEATMA1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}