{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IPN50R1K4CEATMA1","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IPN50R1K4CEATMA1","canonicalUrl":"https://icboms.com/infineon/IPN50R1K4CEATMA1","factsUrl":"https://icboms.com/api/mcp/products/IPN50R1K4CEATMA1","rawCanonicalId":null},"summary":{"shortDescription":"Infineon CoolMOS™ CE series, IPN50R1K4CEATMA1, N-Channel MOSFET, 500 V Vdss, 4.8 A Id, 1.4 Ohm Rds(on) at 13 V gate drive, PG-SOT223-3 surface-mount package, -40°C to 150°C junction temperature.","salesMarkdown":"## 500 V, 4.8 A CoolMOS CE in a compact SOT223 It packs a 1.4 Ohm maximum on-resistance — specified at 900 mA drain current with 13 V gate drive — into the PG-SOT223-3 surface-mount footprint. The 1.4 Ohm Rds(on) at 13 V gate drive is the figure to use for conduction-loss calculations at the nominal operating point. At 900 mA, that is about 1.1 W of conduction loss — well within the 5 W package limit, but the junction temperature rise will cut into that margin as ambient climbs. The total gate charge of 8.2 nC at 10 V means a modest gate driver can switch this FET at 100 kHz with under 1 mA average drive current; switching losses stay low enough for most flyback and single-switch forward topologies. Input capacitance is 178 pF at 100 V drain bias — a light load on the driver, and the Miller plateau will be short, which helps keep the turn-on and turn-off delays in the tens of nanoseconds range. For a 100 kHz hard-switched design, the crossover losses will be dominated by the output capacitance (Coss) rather than the gate charge, so plan for a snubber or a valley-switching controller if efficiency targets are tight. ## Package thermal reality — SOT223 at 5 W The PG-SOT223-3 package is rated for 5 W total power dissipation at the case. That is a firm ceiling — the copper pad area on the PCB under the drain tab sets the actual thermal resistance. For continuous operation at 4.8 A, the conduction loss alone will push past 5 W unless the Rds(on) is de-rated for temperature (it roughly doubles at 150°C junction). In practice, this part is run at 1-2 A continuous with good PCB heatsinking, or used in pulsed applications like inrush limiting. The 150°C ceiling is a hard stop — the plastic SOT223 will not survive sustained operation above that, and the solder joints fatigue faster at the high end of the range. Infineon continues to manufacture the CoolMOS CE series in the SOT223 package. No known PCN on this specific variant; the date-code and marking traceability back to Infineon's fabs is clean through the authorized channel.","metaTitle":"Infineon IPN50R1K4CEATMA1 N-Channel MOSFET, 500V 4.8A SOT223","metaDescription":"Infineon CoolMOS CE N-channel MOSFET, 500V Vdss, 4.8A Id, 1.4 Ohm Rds(on) at 13V gate. PG-SOT223-3 package. Active lifecycle.","metaKeywords":null},"attributes":{"series":"CoolMOS™ CE","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"CoolMOS™ CE","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","Package / Case":"TO-261-4, TO-261AA","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"3.5V @ 70µA","Operating Temperature":"-40°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"1.4Ohm @ 900mA, 13V","Power Dissipation (Max)":"5W (Tc)","Supplier Device Package":"PG-SOT223-3","Gate Charge (Qg) (Max) @ Vgs":"8.2 nC @ 10 V","Drain to Source Voltage (Vdss)":"500 V","Input Capacitance (Ciss) (Max) @ Vds":"178 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"13V","Current - Continuous Drain (Id) @ 25°C":"4.8A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.6","priceTiers":[{"qty":1,"price":"$0.60000","currency":"USD"},{"qty":10,"price":"$0.51200","currency":"USD"},{"qty":100,"price":"$0.35600","currency":"USD"},{"qty":500,"price":"$0.27798","currency":"USD"},{"qty":1000,"price":"$0.22594","currency":"USD"},{"qty":3000,"price":"$0.20198","currency":"USD"},{"qty":6000,"price":"$0.19171","currency":"USD"},{"qty":9000,"price":"$0.17802","currency":"USD"},{"qty":30000,"price":"$0.17391","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/acf7b28a01205f8e627eccc6874f1e90.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/IPN50R1K4CEATMA1/alternatives.json"},"ai":{"faq":[{"question":"What is the Rds(on) of IPN50R1K4CEATMA1?","answer":"Maximum on-resistance is 1.4 Ohm, specified at 900 mA drain current with 13 V gate-to-source drive. This is the value to use for worst-case conduction loss calculations at 25°C junction; expect Rds(on) to approximately double at 150°C junction."},{"question":"What is the gate charge of IPN50R1K4CEATMA1?","answer":"Total gate charge is 8.2 nC maximum at 10 V gate drive. This low Qg keeps switching losses manageable in hard-switched topologies up to several hundred kHz."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IPN50R1K4CEATMA1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IPN50R1K4CEATMA1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-20T14:34:45.345Z","lastPublished":"2026-07-20T14:34:45.345Z","indexable":true}}