{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IPI80N04S4-03","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IPI80N04S4-03","canonicalUrl":"https://icboms.com/infineon/IPI80N04S4-03","factsUrl":"https://icboms.com/api/mcp/products/IPI80N04S4-03","rawCanonicalId":null},"summary":{"shortDescription":"Infineon CoolMOS™ N-Channel MOSFET, IPI80N04S4-03, 40V Vdss, 80A Id, 3.7mOhm Rds(on) at 10V, 66nC Qg, TO-262-3 (PG-TO262-3-1), -55 to 175°C.","salesMarkdown":"## 40 V, 80 A, 3.7 mΩ — the conduction-loss ceiling for this TO-262 CoolMOS™ The Infineon IPI80N04S4-03 is an N-channel enhancement-mode CoolMOS™ power MOSFET in a through-hole TO-262-3 (PG-TO262-3-1) package. The 66 nC typical gate charge at 10 V keeps switching losses manageable in hard-switched topologies up to a few hundred kHz. At 80 A load, conduction loss with the 3.7 mΩ maximum Rds(on) (at 10 V gate drive) is under 24 W — within the 94 W package limit, but the junction-to-case thermal path will need a heatsink sized for the duty cycle. The 66 nC gate charge means the gate driver should source at least 1 A peak to keep switching edges clean and cross-conduction low. The ±20 V maximum gate rating gives margin for ringing on long gate traces, but a 10 V drive rail is the sweet spot for minimum Rds(on). For production programs that need a second-source hedge, Infineon's CoolMOS™ portfolio includes several 40 V N-channel TO-262 parts with similar Rds(on) and current ratings — parametric cross-reference is straightforward from the datasheet tables.","metaTitle":"Infineon IPI80N04S4-03 CoolMOS™ N-Channel MOSFET","metaDescription":"Infineon IPI80N04S4-03 CoolMOS™ N-channel MOSFET, 40V Vdss, 80A Id, 3.7mOhm Rds(on) at 10V. TO-262 package. Active lifecycle.","metaKeywords":null},"attributes":{"series":"CoolMOS™","packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Logic ICs"],"specifications":{"Series":"CoolMOS™","Package":"Bulk","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Through Hole","Package / Case":"TO-262-3 Long Leads, I²Pak, TO-262AA","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 53µA","Operating Temperature":"-55°C ~ 175°C (TJ)","Rds On (Max) @ Id, Vgs":"3.7mOhm @ 80A, 10V","Power Dissipation (Max)":"94W (Tc)","Supplier Device Package":"PG-TO262-3-1","Gate Charge (Qg) (Max) @ Vgs":"66 nC @ 10 V","Drain to Source Voltage (Vdss)":"40 V","Input Capacitance (Ciss) (Max) @ Vds":"5260 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"80A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.89","stockQuantity":0,"priceTiers":[{"qty":350,"price":"$0.89000","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/046d7e7bc3b66fded86665e43dac2fc9.pdf","sourceUrl":null},"ai":{"faq":[],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IPI80N04S4-03","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IPI80N04S4-03 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}