{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IPI126N10N3GXKSA1","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IPI126N10N3GXKSA1","canonicalUrl":"https://icboms.com/infineon/IPI126N10N3GXKSA1","factsUrl":"https://icboms.com/api/mcp/products/IPI126N10N3GXKSA1","rawCanonicalId":null},"summary":{"shortDescription":"Infineon OptiMOS™ 3 IPI126N10N3GXKSA1, N-channel power MOSFET, 100 V Vds, 58 A Id, 12.6 mOhm Rds(on) at 10 V, 35 nC Qg, TO-262-3 through-hole, -55 to 175°C.","salesMarkdown":"The 12.6 mOhm maximum on-resistance at 10 V Vgs sets the conduction loss floor for the power stage — at 46 A the dissipation stays under 27 W before factoring in the temperature derating. ## Gate charge and switching — 35 nC at 10 V Total gate charge is 35 nC at 10 V. For a 100 kHz hard-switched converter, the gate drive current needed is roughly 3.5 mA average — well within a standard totem-pole driver — but the peak current from the driver must clear the Miller plateau without slowing the switching edge. Input capacitance Ciss is 2500 pF at 50 V drain bias. ## Through-hole TO-262 — mounting and thermal path The PG-TO262-3 (I²Pak, TO-262AA) package is a through-hole form with long leads. The exposed metal tab on the back provides the primary thermal path to the heatsink or PCB copper — the 94 W power dissipation limit assumes the tab is held at case temperature. Mounting requires a hole or clip for the tab; the three through-hole leads handle the current. For a rework bench, the lead length and tab geometry are standard across the TO-262 family — the footprint matches the common I²Pak land pattern. ## Temperature grade and operating envelope That 175°C ceiling is typical for automotive-grade power MOSFETs — the part can survive under-hood soak temperatures and high-load transients, but the Rds(on) doubles roughly above 100°C junction, so the thermal design must budget for the hot resistance. The gate threshold voltage maximum is 3.5 V at 46 µA drain current. With the recommended drive voltage window of 6 V to 10 V for rated Rds(on), a standard 12 V gate drive from a PWM controller or gate driver IC fully enhances the channel. ## Lifecycle and sourcing posture Infineon continues to manufacture the OptiMOS 3 series in this voltage class.","metaTitle":"IPI126N10N3GXKSA1 N-Channel Power MOSFET, 100 V, 12.6 mOhm","metaDescription":"Infineon IPI126N10N3GXKSA1 OptiMOS 3 N-channel MOSFET, 100 V, 58 A, 12.6 mOhm Rds(on) at 10 V. Active lifecycle, TO-262-3 package. Quoted to order.","metaKeywords":null},"attributes":{"series":"OptiMOS™ 3","packageCase":null,"mountingType":null,"rohsStatus":"Not applicable","productStatus":"Active","categoryPath":[],"specifications":{"Series":"OptiMOS™ 3","Package":"Bulk","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Through Hole","Package / Case":"TO-262-3 Long Leads, I²Pak, TO-262AA","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"3.5V @ 46µA","Operating Temperature":"-55°C ~ 175°C (TJ)","Rds On (Max) @ Id, Vgs":"12.6mOhm @ 46A, 10V","Power Dissipation (Max)":"94W (Tc)","Supplier Device Package":"PG-TO262-3","Gate Charge (Qg) (Max) @ Vgs":"35 nC @ 10 V","Drain to Source Voltage (Vdss)":"100 V","Input Capacitance (Ciss) (Max) @ Vds":"2500 pF @ 50 V","Drive Voltage (Max Rds On, Min Rds On)":"6V, 10V","Current - Continuous Drain (Id) @ 25°C":"58A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.64","stockQuantity":0,"priceTiers":[{"qty":433,"price":"$0.69000","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/ab861543d71de351920d61ee803ff397.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the exact Rds(on) of IPI126N10N3GXKSA1 at 10 V Vgs?","answer":"The maximum on-resistance at 10 V Vgs and 46 A drain current is 12.6 mOhm. This is the worst-case value at 25°C junction temperature — the typical value is lower, but the BOM should budget for the 12.6 mOhm ceiling."},{"question":"Does IPI126N10N3GXKSA1 have a direct replacement or equivalent?","answer":"No official second-source or direct replacement is listed on the record for this specific order code. The peer IPD50R950CEAUMA1 is a 500 V CoolMOS CE device in a surface-mount package — different voltage class and mounting, so not a functional substitute."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IPI126N10N3GXKSA1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IPI126N10N3GXKSA1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}