{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IPI086N10N3GXKSA1","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IPI086N10N3GXKSA1","canonicalUrl":"https://icboms.com/infineon/IPI086N10N3GXKSA1","factsUrl":"https://icboms.com/api/mcp/products/IPI086N10N3GXKSA1","rawCanonicalId":null},"summary":{"shortDescription":"Infineon OptiMOS IPI086N10N3GXKSA1, N-channel MOSFET, 100 V Vdss, 80 A Id, 8.6 mOhm Rds(on) at 10 V, TO-262-3 through-hole package, -55 to 175 °C.","salesMarkdown":"## Gate charge and switching speed Total gate charge is 55 nC at 10 V, with an input capacitance of 3980 pF at 50 V drain-source. The gate charge figure tells the drive circuit designer what the gate driver must deliver per switching cycle — at 100 kHz, that is 5.5 mA average gate current, well within a standard half-bridge driver's capability. ## Thermal headroom and package Rated for 125 W power dissipation at case temperature, with a maximum junction temperature of 175 °C. The TO-262-3 (PG-TO262-3) through-hole package with long leads suits designs where the PCB copper area under the tab sets the thermal resistance — the 175 °C ceiling gives margin in high-ambient or forced-air environments. ## Active production, no LTB concern ROHS3 compliant.","metaTitle":"Infineon IPI086N10N3GXKSA1 N-Channel MOSFET, 100 V, 80 A","metaDescription":"Infineon OptiMOS N-channel MOSFET, 100 V drain-source, 80 A continuous, 8.6 mOhm Rds(on) at 10 V. TO-262-3 package. Active production.","metaKeywords":null},"attributes":{"series":"OptiMOS™","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"OptiMOS™","Package":"Tube","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Through Hole","Package / Case":"TO-262-3 Long Leads, I²Pak, TO-262AA","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"3.5V @ 75µA","Operating Temperature":"-55°C ~ 175°C (TJ)","Rds On (Max) @ Id, Vgs":"8.6mOhm @ 73A, 10V","Power Dissipation (Max)":"125W (Tc)","Supplier Device Package":"PG-TO262-3","Gate Charge (Qg) (Max) @ Vgs":"55 nC @ 10 V","Drain to Source Voltage (Vdss)":"100 V","Input Capacitance (Ciss) (Max) @ Vds":"3980 pF @ 50 V","Drive Voltage (Max Rds On, Min Rds On)":"6V, 10V","Current - Continuous Drain (Id) @ 25°C":"80A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.58","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$1.58000","currency":"USD"},{"qty":10,"price":"$1.31500","currency":"USD"},{"qty":100,"price":"$1.04640","currency":"USD"},{"qty":500,"price":"$0.88542","currency":"USD"},{"qty":1000,"price":"$0.75126","currency":"USD"},{"qty":2000,"price":"$0.71370","currency":"USD"},{"qty":5000,"price":"$0.68686","currency":"USD"},{"qty":10000,"price":"$0.66413","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/f29551210898547a410b9c72408815bb.pdf","sourceUrl":null},"ai":{"faq":[{"question":"Will the IPI086N10N3GXKSA1 drop into a panel designed for the IPD50R950CEAUMA1?","answer":"No — the IPD50R950CEAUMA1 is a 500 V CoolMOS CE device in a surface-mount package, while the IPI086N10N3GXKSA1 is a 100 V OptiMOS in a through-hole TO-262-3 package. They are not pin-compatible or functionally interchangeable without a board redesign."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IPI086N10N3GXKSA1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IPI086N10N3GXKSA1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}