{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IPI023NE7N3G","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IPI023NE7N3G","canonicalUrl":"https://icboms.com/infineon/IPI023NE7N3G","factsUrl":"https://icboms.com/api/mcp/products/IPI023NE7N3G","rawCanonicalId":null},"summary":{"shortDescription":"Infineon OptiMOS™ N-Channel Power MOSFET, 75 V Vdss, 2.3 mOhm Rds(on) @ 100 A, 120 A continuous drain, TO-262-3 Long Leads (PG-TO262-3), -55 to 175 °C junction temperature.","salesMarkdown":"The wide Tj range also helps when the thermal interface is marginal; the silicon itself won't be the weak link. Three leads — gate, drain (tab), source — mate to a standard TO-262 hole pattern. The PG-TO262-3 supplier package designation is the Infineon internal code; mechanically it matches the industry-standard I²Pak outline. No NRND or last-time-buy notices exist for this order code.","metaTitle":"IPI023NE7N3G OptiMOS N-Channel MOSFET, 75 V, 2.3 mOhm","metaDescription":"Infineon IPI023NE7N3G OptiMOS N-channel power MOSFET, 75 Vdss, 2.3 mOhm Rds(on), 120 A, TO-262. ROHS3 compliant.","metaKeywords":null},"attributes":{"series":"OptiMOS™","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"OptiMOS™","Package":"Bulk","FET Type":"N-Channel","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Through Hole","Package / Case":"TO-262-3 Long Leads, I²Pak, TO-262AA","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"3.8V @ 273µA","Operating Temperature":"-55°C ~ 175°C (TJ)","Rds On (Max) @ Id, Vgs":"2.3mOhm @ 100A, 10V","Power Dissipation (Max)":"300W (Tc)","Supplier Device Package":"PG-TO262-3","Gate Charge (Qg) (Max) @ Vgs":"206 nC @ 10 V","Drain to Source Voltage (Vdss)":"75 V","Input Capacitance (Ciss) (Max) @ Vds":"14400 pF @ 37.5 V","Current - Continuous Drain (Id) @ 25°C":"120A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$2.11","priceTiers":[{"qty":143,"price":"$2.11000","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/0b56d1605f0431de15210328d308c644.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/IPI023NE7N3G/alternatives.json"},"ai":{"faq":[{"question":"Is IPI023NE7N3G RoHS compliant?","answer":"Yes, it is ROHS3 compliant."},{"question":"What is the gate charge and what does it mean for driver selection?","answer":"The maximum gate charge is 206 nC at 10 V. A gate driver with at least 2 A peak current capability will keep switching transitions under 20 ns; a weaker driver increases switching loss at higher frequencies."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IPI023NE7N3G","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IPI023NE7N3G when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-16T10:39:33.080Z","lastPublished":"2026-07-16T10:39:33.080Z","indexable":true}}