{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IPD900P06NMATMA1","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IPD900P06NMATMA1","canonicalUrl":"https://icboms.com/infineon/IPD900P06NMATMA1","factsUrl":"https://icboms.com/api/mcp/products/IPD900P06NMATMA1","rawCanonicalId":null},"summary":{"shortDescription":"Infineon OptiMOS™ IPD900P06NMATMA1, P-Channel MOSFET, 60V Vdss, 16.4A Id, 90mOhm Rds(on) at 10V, 27nC Qg, PG-TO252-3-313, -55°C to 175°C.","salesMarkdown":"## P-Channel high-side switch in a 60 V, 16.4 A class The Infineon IPD900P06NMATMA1 is a P-Channel enhancement-mode MOSFET from the OptiMOS™ series, housed in a PG-TO252-3-313 (DPAK) surface-mount package. ## Conduction loss and gate drive budget At 16.4 A and 90 mOhm, the conduction loss hits 24.2 W — well within the 63 W power dissipation rating at the case, but the junction-to-ambient thermal path in a DPAK will require a solid copper pour on the drain tab. The 27 nC total gate charge at 10 V means a standard gate driver with 1 A peak source can switch the FET in under 30 ns, keeping crossover losses low in a 100 kHz PWM application. ## 175 °C junction — thermal headroom for tight spots That extra 25 °C matters in under-hood automotive or motor-drive environments where ambient air hits 105 °C and the heatsink is shared. The 4 V maximum gate threshold at 710 µA ensures the FET is fully enhanced with 5 V logic, though the 10 V drive voltage for minimum Rds(on) is the target for lowest loss.","metaTitle":"Infineon IPD900P06NMATMA1 P-Channel MOSFET, 60V 16.4A TO252","metaDescription":"Infineon OptiMOS™ P-Channel MOSFET, 60V drain-source, 16.4A continuous drain, 90mOhm Rds(on) at 10V. Active production, ROHS3 compliant.","metaKeywords":null},"attributes":{"series":"OptiMOS™","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"OptiMOS™","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"P-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 710µA","Operating Temperature":"-55°C ~ 175°C (TJ)","Rds On (Max) @ Id, Vgs":"90mOhm @ 16.4A, 10V","Power Dissipation (Max)":"63W (Tc)","Supplier Device Package":"PG-TO252-3-313","Gate Charge (Qg) (Max) @ Vgs":"27 nC @ 10 V","Drain to Source Voltage (Vdss)":"60 V","Input Capacitance (Ciss) (Max) @ Vds":"1100 pF @ 30 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"16.4A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.14","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$1.14000","currency":"USD"},{"qty":10,"price":"$0.93000","currency":"USD"},{"qty":100,"price":"$0.72370","currency":"USD"},{"qty":500,"price":"$0.61340","currency":"USD"},{"qty":1000,"price":"$0.49969","currency":"USD"},{"qty":2500,"price":"$0.47040","currency":"USD"},{"qty":5000,"price":"$0.44800","currency":"USD"},{"qty":12500,"price":"$0.42732","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/7bc90d7b86b7dac80ffc3bc082da3570.pdf","sourceUrl":null},"ai":{"faq":[],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IPD900P06NMATMA1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IPD900P06NMATMA1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}