{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IPD80R1K0CEATMA1","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IPD80R1K0CEATMA1","canonicalUrl":"https://icboms.com/infineon/IPD80R1K0CEATMA1","factsUrl":"https://icboms.com/api/mcp/products/IPD80R1K0CEATMA1","rawCanonicalId":null},"summary":{"shortDescription":"Infineon CoolMOS™ CE series, IPD80R1K0CEATMA1, N-Channel MOSFET, 800V Vdss, 5.7A Id, 950mOhm Rds(on) at 10V, TO-252-3 (DPak) package, -55 to 150°C.","salesMarkdown":"## 800 V CoolMOS™ CE — high-voltage primary switch for offline power The IPD80R1K0CEATMA1 is an N-channel 800 V MOSFET from Infineon's CoolMOS™ CE series, built on a charge-compensation technology that keeps on-resistance low while handling high blocking voltage. This part targets the primary switch position in flyback and PFC stages for 85–265 VAC input off-line supplies, where the 800 V rating provides headroom above the rectified DC bus and the CoolMOS™ low-Qg structure keeps switching losses manageable. ## Parametric anchor points for the BOM engineer Total gate charge is 31 nC at 10 V — the driver's average output current must deliver that charge within the target switching period. Input capacitance is 785 pF at 100 V drain-source, a figure that influences the gate-drive loop layout and the Miller plateau duration. Maximum power dissipation is 83 W at case temperature, though the practical limit is set by the junction-to-case thermal path in the TO-252-3 package. Gate threshold voltage max is 3.9 V at 250 µA drain current — the design must supply at least 10 V gate drive to achieve the rated Rds(on). The ±20 V Vgs absolute maximum leaves margin for gate-drive overshoot in hard-switched topologies. The part is ROHS3 compliant, which means the bill of materials passes European reflow-compliance checks without an exemption review. The PG-TO252-3 package is a standard DPak footprint shared across the CoolMOS™ CE family. ## Sourcing posture and procurement close No stock-holding claim is made here; the RFQ process establishes the actual lead window.","metaTitle":"Infineon IPD80R1K0CEATMA1 CoolMOS™ CE N-Ch MOSFET, 800V 5.7A","metaDescription":"Infineon IPD80R1K0CEATMA1 N-channel 800V 5.7A MOSFET in TO-252-3. Rds(on) 950mOhm at 10V. Active lifecycle, ROHS3 compliant.","metaKeywords":null},"attributes":{"series":"CoolMOS™ CE","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"CoolMOS™ CE","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"3.9V @ 250µA","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"950mOhm @ 3.6A, 10V","Power Dissipation (Max)":"83W (Tc)","Supplier Device Package":"PG-TO252-3","Gate Charge (Qg) (Max) @ Vgs":"31 nC @ 10 V","Drain to Source Voltage (Vdss)":"800 V","Input Capacitance (Ciss) (Max) @ Vds":"785 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"5.7A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.5","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$1.50000","currency":"USD"},{"qty":10,"price":"$1.24800","currency":"USD"},{"qty":100,"price":"$0.99300","currency":"USD"},{"qty":500,"price":"$0.84024","currency":"USD"},{"qty":1000,"price":"$0.71294","currency":"USD"},{"qty":2500,"price":"$0.67729","currency":"USD"},{"qty":5000,"price":"$0.65183","currency":"USD"},{"qty":12500,"price":"$0.63025","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/9ae099ee4f6a6d2de7d19dfd513ef7a8.pdf","sourceUrl":null},"ai":{"faq":[{"question":"How can I order IPD80R1K0CEATMA1 and check current availability?","answer":"Submit an RFQ through this listing. No stock-holding claim is made on this page."},{"question":"What is the drain current rating of IPD80R1K0CEATMA1?","answer":"The continuous drain current is 5.7 A at 25 °C case temperature. That rating assumes the tab is properly heatsunk to keep the junction within the -55 °C to 150 °C operating range."},{"question":"What is the Rds(on) of IPD80R1K0CEATMA1 at 10V?","answer":"This is the value used for conduction-loss calculations at the rated operating point."},{"question":"Is IPD80R1K0CEATMA1 RoHS compliant?","answer":"Yes, it carries ROHS3 compliance status. No exemption declarations are needed for EU reflow soldering."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IPD80R1K0CEATMA1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IPD80R1K0CEATMA1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}