{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IPD70R1K4P7SAUMA1","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IPD70R1K4P7SAUMA1","canonicalUrl":"https://icboms.com/infineon/IPD70R1K4P7SAUMA1","factsUrl":"https://icboms.com/api/mcp/products/IPD70R1K4P7SAUMA1","rawCanonicalId":null},"summary":{"shortDescription":"Infineon CoolMOS™ P7 series, IPD70R1K4P7SAUMA1, N-Channel MOSFET, 700 V Vdss, 4 A Id, 1.4 Ohm Rds(on), 4.7 nC Qg, PG-TO252-3 package, -40°C to 150°C junction temperature.","salesMarkdown":"## 700 V N-channel in a TO-252 — what the CoolMOS P7 brings to the board The Infineon IPD70R1K4P7SAUMA1 is a 700 V N-channel MOSFET from the CoolMOS P7 series, housed in a surface-mount PG-TO252-3 package. It is designed for hard-switching topologies in power supplies, adapters, and lighting ballasts where the combination of high-voltage blocking and low gate charge keeps switching losses in check. The 158 pF input capacitance at 400 V drain-source confirms the small die size; the driver IC does not need a high peak current to charge the gate. ## Package and footprint — TO-252 for automated assembly The PG-TO252-3 (DPak) footprint is a standard surface-mount outline with a single drain tab.","metaTitle":"Infineon IPD70R1K4P7SAUMA1 CoolMOS P7 N-Ch MOSFET, 700V 4A","metaDescription":"Infineon IPD70R1K4P7SAUMA1 CoolMOS P7 N-channel MOSFET, 700 V drain-source, 1.4 Ohm Rds(on), 4.7 nC gate charge. Active production, ROHS3 compliant.","metaKeywords":null},"attributes":{"series":"CoolMOS™ P7","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"CoolMOS™ P7","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±16V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"3.5V @ 40µA","Operating Temperature":"-40°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"1.4Ohm @ 700mA, 10V","Power Dissipation (Max)":"23W (Tc)","Supplier Device Package":"PG-TO252-3","Gate Charge (Qg) (Max) @ Vgs":"4.7 nC @ 10 V","Drain to Source Voltage (Vdss)":"700 V","Input Capacitance (Ciss) (Max) @ Vds":"158 pF @ 400 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"4A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.58","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$0.58000","currency":"USD"},{"qty":10,"price":"$0.50500","currency":"USD"},{"qty":100,"price":"$0.34970","currency":"USD"},{"qty":500,"price":"$0.29222","currency":"USD"},{"qty":1000,"price":"$0.24870","currency":"USD"},{"qty":2500,"price":"$0.22150","currency":"USD"},{"qty":5000,"price":"$0.20984","currency":"USD"},{"qty":12500,"price":"$0.19430","currency":"USD"},{"qty":25000,"price":"$0.19238","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/9fa6fb87db0a41021e39c1f5141bc1ac.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the Rds(on) of IPD70R1K4P7SAUMA1?","answer":"At lower gate voltages the Rds(on) rises; the datasheet curve shows the typical value at 8 V is about 1.6 Ohm. For a 4 A load the conduction loss at 1.4 Ohm is 22.4 W — well within the 23 W power dissipation limit only if the case temperature is kept at 25°C or below."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IPD70R1K4P7SAUMA1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IPD70R1K4P7SAUMA1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}