{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IPD70N12S311ATMA1","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IPD70N12S311ATMA1","canonicalUrl":"https://icboms.com/infineon/IPD70N12S311ATMA1","factsUrl":"https://icboms.com/api/mcp/products/IPD70N12S311ATMA1","rawCanonicalId":null},"summary":{"shortDescription":"Infineon OptiMOS™ IPD70N12S311ATMA1, N-Channel Automotive MOSFET, 120V Vdss, 70A Id, 11.1mOhm Rds(on) @ 10V, 65nC Qg, PG-TO252-3 package, -55°C to 175°C.","salesMarkdown":"## 120 V, 70 A N-channel — the conduction-loss story The Infineon IPD70N12S311ATMA1 is a 120 V, 70 A N-channel MOSFET from the OptiMOS™ series, built for automotive power switching where every milliohm of on-resistance matters. AEC-Q101 qualification and the -55°C to 175°C junction temperature range mean this part is qualified for under-hood and engine-bay environments where standard industrial MOSFETs would derate or fail. The TO-252-3 (DPak) surface-mount package keeps the board footprint small, but the exposed tab demands a proper thermal pad on the PCB to pull heat out. ## Gate charge and switching — what 65 nC buys you With a typical gate charge of 65 nC at 10 V, this MOSFET is not a high-speed switcher for 500 kHz+ converters — it is sized for PWM frequencies in the 20 kHz to 100 kHz range where the switching loss from charging and discharging the 4355 pF input capacitance is manageable. The 10 V drive voltage for minimum Rds(on) is standard for automotive gate drivers; a 5 V logic-level drive will not fully enhance the channel, so budget a proper gate driver IC or a 10 V rail. ## Package reality — TO-252-3 on the board The PG-TO252-3 (DPak) package is a single-gauge surface-mount tabbed device. The tab is the drain — it needs a generous copper pour on the PCB to handle the 125 W power dissipation at the case. The ±20 V max gate-source voltage means the gate is not fragile, but ESD handling is still required — a wrist strap and grounded workstation are the minimum.","metaTitle":"IPD70N12S311ATMA1 OptiMOS N-Ch 120V 70A MOSFET, AEC-Q101","metaDescription":"Infineon IPD70N12S311ATMA1 N-channel MOSFET, 120V Vdss, 70A Id, 11.1mOhm Rds(on), AEC-Q101 qualified, TO-252-3 package.","metaKeywords":null},"attributes":{"series":"OptiMOS™","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Grade":"Automotive","Series":"OptiMOS™","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","Qualification":"AEC-Q101","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 83µA","Operating Temperature":"-55°C ~ 175°C (TJ)","Rds On (Max) @ Id, Vgs":"11.1mOhm @ 70A, 10V","Power Dissipation (Max)":"125W (Tc)","Supplier Device Package":"PG-TO252-3","Gate Charge (Qg) (Max) @ Vgs":"65 nC @ 10 V","Drain to Source Voltage (Vdss)":"120 V","Input Capacitance (Ciss) (Max) @ Vds":"4355 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"70A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$2.02","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$2.02000","currency":"USD"},{"qty":10,"price":"$1.68100","currency":"USD"},{"qty":100,"price":"$1.33770","currency":"USD"},{"qty":500,"price":"$1.13188","currency":"USD"},{"qty":1000,"price":"$0.96039","currency":"USD"},{"qty":2500,"price":"$0.91237","currency":"USD"},{"qty":5000,"price":"$0.87807","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/7b3b8743933c23b89dda9f93d77c79e8.pdf","sourceUrl":null},"ai":{"faq":[{"question":"Is IPD70N12S311ATMA1 AEC-Q101 qualified?","answer":"Yes, the IPD70N12S311ATMA1 is AEC-Q101 qualified, which means it has passed the automotive stress tests for discrete semiconductors — including high-temperature reverse bias, temperature cycling, and humidity. This qualification is required for parts used in safety-critical and under-hood automotive systems."},{"question":"Is IPD70N12S311ATMA1 a logic-level MOSFET?","answer":"No. A 5 V logic-level signal will not fully enhance the channel — you need a gate driver that supplies 10 V to achieve the rated 11.1 mOhm on-resistance."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IPD70N12S311ATMA1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IPD70N12S311ATMA1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}