{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IPD65R660CFDAATMA1","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IPD65R660CFDAATMA1","canonicalUrl":"https://icboms.com/infineon/IPD65R660CFDAATMA1","factsUrl":"https://icboms.com/api/mcp/products/IPD65R660CFDAATMA1","rawCanonicalId":null},"summary":{"shortDescription":"Infineon CoolMOS™ IPD65R660CFDAATMA1, N-Channel MOSFET, 650 V Vdss, 6 A Id, 660 mOhm Rds(on) at 10 V, PG-TO252-3 (DPak) package, AEC-Q101 qualified, -40°C to 150°C junction temperature.","salesMarkdown":"## 650 V CoolMOS for automotive and industrial power stages This device is part of the CoolMOS™ series, Infineon's high-voltage MOSFET platform optimized for low switching and conduction losses in hard-switching topologies. ## AEC-Q101 qualification and automotive temperature range The IPD65R660CFDAATMA1 carries AEC-Q101 qualification, making it suitable for automotive-grade power stages where the part must survive the under-hood temperature extremes. ## Gate drive and switching considerations The total gate charge is 20 nC at 10 V Vgs, which is moderate for a 650 V device. In a 100 kHz hard-switched application, the gate drive must supply an average current of about 2 mA plus the peak current needed to charge the gate capacitance during the switching transition. The maximum gate-source voltage rating is ±20 V, so a 10 V or 12 V gate drive rail is well within the safe operating area. The input capacitance Ciss is 543 pF at 100 V Vds. This capacitance, combined with the gate drive source impedance, sets the switching times. For fast edge rates, a dedicated gate driver IC with a low-output impedance is recommended to minimize Miller plateau duration. ## Thermal management in the TO-252 package The maximum power dissipation is 62.5 W at the case temperature. In a surface-mount TO-252 (DPak) package, the thermal performance depends heavily on the PCB copper area connected to the drain tab. For continuous operation at the 6 A rating, a minimum of 1 square inch of 2-oz copper on the drain pad is typical to keep the junction temperature below 150°C at an ambient of 85°C. ## Sourcing and supply posture No stock-holding claim is made; the supply channel is verified per BOM quantity.","metaTitle":"Infineon IPD65R660CFDAATMA1 CoolMOS N-Ch MOSFET, 650V 6A","metaDescription":"Infineon IPD65R660CFDAATMA1 N-channel 650V 6A CoolMOS MOSFET in TO-252-3. AEC-Q101 qualified for automotive. 660mOhm Rds(on) at 10V.","metaKeywords":null},"attributes":{"series":"CoolMOS™","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Grade":"Automotive","Series":"CoolMOS™","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","Qualification":"AEC-Q101","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4.5V @ 214.55µA","Operating Temperature":"-40°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"660mOhm @ 3.22A, 10V","Power Dissipation (Max)":"62.5W (Tc)","Supplier Device Package":"PG-TO252-3","Gate Charge (Qg) (Max) @ Vgs":"20 nC @ 10 V","Drain to Source Voltage (Vdss)":"650 V","Input Capacitance (Ciss) (Max) @ Vds":"543 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"6A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$2.22","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$2.22000","currency":"USD"},{"qty":10,"price":"$1.84600","currency":"USD"},{"qty":100,"price":"$1.46890","currency":"USD"},{"qty":500,"price":"$1.24290","currency":"USD"},{"qty":1000,"price":"$1.05458","currency":"USD"},{"qty":2500,"price":"$1.00185","currency":"USD"},{"qty":5000,"price":"$0.96418","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/93246110730c92333af260012bdbfd0b.pdf","sourceUrl":null},"ai":{"faq":[{"question":"Is IPD65R660CFDAATMA1 AEC-Q101 qualified?","answer":"Yes, the IPD65R660CFDAATMA1 is AEC-Q101 qualified, which is the automotive-grade stress qualification for discrete semiconductors. This qualification covers the part for use in automotive electronic systems where reliability under temperature cycling, high-temperature reverse bias, and other stress tests is required."},{"question":"What is the Rds(on) of IPD65R660CFDAATMA1?","answer":"The maximum on-resistance is 660 mOhm at a drain current of 3.22 A and a gate-source voltage of 10 V. This is the specified Rds(on) value used for conduction loss calculations in the design. Note that Rds(on) increases with junction temperature; at 150°C the typical value is roughly 1.5 to 1.7 times the 25°C value."},{"question":"Is IPD65R660CFDAATMA1 RoHS compliant?","answer":"Yes, the part is listed as ROHS3 Compliant, meaning it meets the Restriction of Hazardous Substances directive including the exemption for lead in high-melting-temperature solders."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IPD65R660CFDAATMA1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IPD65R660CFDAATMA1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}