{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IPD65R600E6","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IPD65R600E6","canonicalUrl":"https://icboms.com/infineon/IPD65R600E6","factsUrl":"https://icboms.com/api/mcp/products/IPD65R600E6","rawCanonicalId":null},"summary":{"shortDescription":"Infineon CoolMOS N-Channel Power MOSFET, 650 V Vds, 600 mOhm Rds(on) @ 2.1 A, 10 V, 7.3 A Id, 23 nC Qg, PG-TO252-3-313, -55 to 150 °C.","salesMarkdown":"## 650 V CoolMOS N-channel — switching loss and thermal budget The Infineon IPD65R600E6 is a 650 V N-channel CoolMOS power MOSFET in a DPak (TO-252) surface-mount package. It is designed for hard-switching topologies where low gate charge and fast body-diode recovery reduce switching losses. The 23 nC total gate charge at 10 V keeps the drive power manageable at moderate switching frequencies. At 600 mOhm max, the on-resistance is moderate for a 650 V device — the part suits applications where conduction loss is secondary to switching loss, such as in auxiliary power supplies and flyback converters. Input capacitance is 440 pF at 100 V Vds, which limits the drive current needed at frequencies up to 100 kHz. ROHS3 compliant; no lead-frame finish concerns for RoHS-sensitive BOM lines. No stock-holding claim; quote per BOM quantity.","metaTitle":"IPD65R600E6 CoolMOS N-Channel MOSFET, 650 V, 600 mOhm","metaDescription":"Infineon IPD65R600E6 CoolMOS N-channel MOSFET: 650 V Vds, 600 mOhm Rds(on), 7.3 A Id, 23 nC Qg. Active production, ROHS3.","metaKeywords":null},"attributes":{"series":"CoolMOS™","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"CoolMOS™","Package":"Bulk","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"3.5V @ 210µA","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"600mOhm @ 2.1A, 10V","Power Dissipation (Max)":"63W (Tc)","Supplier Device Package":"PG-TO252-3-313","Gate Charge (Qg) (Max) @ Vgs":"23 nC @ 10 V","Drain to Source Voltage (Vdss)":"650 V","Input Capacitance (Ciss) (Max) @ Vds":"440 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"7.3A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.75","stockQuantity":0,"priceTiers":[{"qty":398,"price":"$0.75000","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/6e469cced21e40a17989d14b8ab6f75a.pdf","sourceUrl":null},"ai":{"faq":[],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IPD65R600E6","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IPD65R600E6 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}