{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IPD60N10S4L12ATMA1","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IPD60N10S4L12ATMA1","canonicalUrl":"https://icboms.com/infineon/IPD60N10S4L12ATMA1","factsUrl":"https://icboms.com/api/mcp/products/IPD60N10S4L12ATMA1","rawCanonicalId":null},"summary":{"shortDescription":"Infineon HEXFET® IPD60N10S4L12ATMA1, N-Channel MOSFET, 100V Vdss, 60A Id, 12mOhm Rds(on) at 10V, AEC-Q101, TO-252-3 DPak, -55°C to 175°C.","salesMarkdown":"## Active production, automotive-graded 100V 60A HEXFET The part carries AEC-Q101 qualification and an Automotive grade rating, making it suitable for under-hood and chassis-domain applications in passenger vehicles and commercial trucks. The junction temperature range extends to 175°C, covering the thermal extremes of engine-bay environments. ## 12mOhm Rds(on) and 49nC gate charge — the switching-stage numbers The 12mOhm on-resistance at 60A and 10V gate drive is the headline conduction figure. At 60A load, the conduction loss is I²R = 43.2W at the maximum Rds(on); at typical load currents the loss is proportionally lower. The 49nC total gate charge at 10V means the gate driver must supply 49nC per switching cycle — at 100kHz that is 4.9mA average drive current, well within the capability of a standard MOSFET driver. Input capacitance is 3170pF at 25V Vds. This sets the driver's peak current requirement for fast switching edges: a 2A driver charges 3170pF across a 10V swing in roughly 16ns. The 94W maximum power dissipation at case temperature assumes a heatsink or adequate PCB copper area on the drain tab. The threshold voltage is 2.1V maximum at 46µA drain current, and the drive voltage range for achieving the rated Rds(on) is 4.5V to 10V. Full on-resistance requires 10V gate drive, but the part can be turned on with 3.3V or 5V logic signals for lower-current applications where higher Rds(on) is acceptable. ## TO-252-3 DPak — surface-mount power package The IPD60N10S4L12ATMA1 is supplied in a TO-252-3 (DPak) surface-mount package, with the Infineon-specific PG-TO252-3-313 variant. The 0.50mm lead pitch is standard for DPak and compatible with most automated assembly lines. The package footprint is common across multiple Infineon and competitor 100V N-channel MOSFETs, allowing pin-compatible substitution in many designs. ## Where this 100V N-channel fits in the BOM The 100V Vdss rating with 60A continuous current places this MOSFET in the sweet spot for 48V and 72V automotive systems (e-axle inverters, DC-DC converters, electric oil pumps) and industrial 48V supplies. The 12mOhm Rds(on) is competitive for this voltage and current class, keeping the package size manageable in DPak. The AEC-Q101 qualification and 175°C junction temperature make it a direct fit for Tier-1 automotive ECU BOMs that require the Q101 stress test suite. The Automotive grade listing confirms the part is released under Infineon's automotive product change notification process.","metaTitle":"IPD60N10S4L12ATMA1 Infineon HEXFET N-Ch 100V 60A MOSFET","metaDescription":"Infineon IPD60N10S4L12ATMA1 HEXFET N-channel MOSFET, 100V Vdss, 60A Id, 12mOhm Rds(on), AEC-Q101 qualified, TO-252-3 DPak.","metaKeywords":null},"attributes":{"series":"HEXFET®","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Grade":"Automotive","Series":"HEXFET®","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±16V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","Qualification":"AEC-Q101","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"2.1V @ 46µA","Operating Temperature":"-55°C ~ 175°C (TJ)","Rds On (Max) @ Id, Vgs":"12mOhm @ 60A, 10V","Power Dissipation (Max)":"94W (Tc)","Supplier Device Package":"PG-TO252-3-313","Gate Charge (Qg) (Max) @ Vgs":"49 nC @ 10 V","Drain to Source Voltage (Vdss)":"100 V","Input Capacitance (Ciss) (Max) @ Vds":"3170 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"4.5V, 10V","Current - Continuous Drain (Id) @ 25°C":"60A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.8","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$1.80000","currency":"USD"},{"qty":10,"price":"$1.49400","currency":"USD"},{"qty":100,"price":"$1.18900","currency":"USD"},{"qty":500,"price":"$1.00606","currency":"USD"},{"qty":1000,"price":"$0.85363","currency":"USD"},{"qty":2500,"price":"$0.81095","currency":"USD"},{"qty":5000,"price":"$0.78046","currency":"USD"},{"qty":12500,"price":"$0.75462","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/2f4505d71be499f53356b6cf3f671b24.pdf","sourceUrl":null},"ai":{"faq":[{"question":"Is IPD60N10S4L12ATMA1 AEC-Q101 qualified?","answer":"Yes, the part carries AEC-Q101 qualification and is listed with an Automotive grade, confirming it meets the stress test and reliability requirements for automotive applications."},{"question":"How does IPD60N10S4L12ATMA1 compare to the IPD50R950CEAUMA1?","answer":"The IPD50R950CEAUMA1 is a 500V CoolMOS™ CE device with 950mOhm Rds(on) and 4.3A current rating, designed for high-voltage flyback and PFC stages. The IPD60N10S4L12ATMA1 is a 100V low-voltage HEXFET with 12mOhm Rds(on) and 60A rating for high-current switching. They are not functional substitutes — the voltage and current classes are completely different."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IPD60N10S4L12ATMA1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IPD60N10S4L12ATMA1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}