{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IPD50R950CEAUMA1","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IPD50R950CEAUMA1","canonicalUrl":"https://icboms.com/infineon/IPD50R950CEAUMA1","factsUrl":"https://icboms.com/api/mcp/products/IPD50R950CEAUMA1","rawCanonicalId":null},"summary":{"shortDescription":"Infineon CoolMOS™ CE series, IPD50R950CEAUMA1, N-Channel MOSFET, 500 V Vdss, 950 mOhm Rds(on) at 1.2 A, 4.3 A continuous drain, PG-TO252-3-344 (DPAK), -55 to 150 °C.","salesMarkdown":"## Rds(on) and gate charge — the switching pair that defines the design The 950 mOhm Rds(on) at 1.2 A and 13 V gate drive sets the conduction-loss floor for a given output current. Paired with a 10.5 nC typical gate charge at 10 V, this FET can be driven by a low-cost gate-drive transformer or a simple driver IC without excessive cross-conduction delay. The 231 pF input capacitance at 100 V drain-source confirms fast switching edges — useful for keeping switching losses low in quasi-resonant or critical-conduction-mode topologies. ## Lifecycle and compliance — active, RoHS3, no LTB clock The IPD50R950CEAUMA1 carries an Active product status and is RoHS3 compliant. No last-time-buy or end-of-life notification is in effect, so it remains a safe choice for new BOM entries and production replenishment. The CoolMOS CE series is a current-generation offering, not a phase-out design. ## Package and mounting — DPAK for standard reflow Housed in the PG-TO252-3-344 (DPAK) surface-mount package, this MOSFET uses the standard DPAK footprint with a tab for thermal dissipation. The -55 °C to 150 °C junction temperature range covers industrial and automotive ambient environments, though the 53 W maximum power dissipation at case temperature requires a properly sized copper area or heatsink on the drain tab for sustained high-load operation.","metaTitle":"IPD50R950CEAUMA1 CoolMOS CE N-Ch MOSFET, 500 V, 950 mOhm","metaDescription":"Infineon IPD50R950CEAUMA1 CoolMOS CE 500 V N-channel MOSFET, 950 mOhm Rds(on), 4.3 A, DPAK. Active, RoHS3. Sourced to order. Request quote.","metaKeywords":null},"attributes":{"series":"CoolMOS™ CE","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":["Memory (DRAM / SRAM / Flash / EEPROM)"],"specifications":{"Series":"CoolMOS™ CE","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"3.5V @ 100µA","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"950mOhm @ 1.2A, 13V","Power Dissipation (Max)":"53W (Tc)","Supplier Device Package":"PG-TO252-3-344","Gate Charge (Qg) (Max) @ Vgs":"10.5 nC @ 10 V","Drain to Source Voltage (Vdss)":"500 V","Input Capacitance (Ciss) (Max) @ Vds":"231 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"13V","Current - Continuous Drain (Id) @ 25°C":"4.3A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.61","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$0.61000","currency":"USD"},{"qty":10,"price":"$0.52600","currency":"USD"},{"qty":100,"price":"$0.36380","currency":"USD"},{"qty":500,"price":"$0.30400","currency":"USD"},{"qty":1000,"price":"$0.25872","currency":"USD"},{"qty":2500,"price":"$0.23042","currency":"USD"},{"qty":5000,"price":"$0.21830","currency":"USD"},{"qty":12500,"price":"$0.20213","currency":"USD"},{"qty":25000,"price":"$0.20012","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/61842d28c143aa6703a9726429960c28.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the Rds(on) of IPD50R950CEAUMA1?","answer":"The maximum on-resistance is 950 mOhm at a drain current of 1.2 A and a gate drive of 13 V. That figure drives conduction loss calculations in the power stage."},{"question":"Is IPD50R950CEAUMA1 RoHS compliant?","answer":"Yes — it is RoHS3 compliant, per the manufacturer's classification."},{"question":"What is the gate charge of IPD50R950CEAUMA1?","answer":"The typical gate charge is 10.5 nC at a 10 V gate drive. This low charge simplifies the gate-driver design and reduces switching losses."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IPD50R950CEAUMA1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IPD50R950CEAUMA1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}