{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IPD50R500CE","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IPD50R500CE","canonicalUrl":"https://icboms.com/infineon/IPD50R500CE","factsUrl":"https://icboms.com/api/mcp/products/IPD50R500CE","rawCanonicalId":null},"summary":{"shortDescription":"Infineon CoolMOS IPD50R500CE, N-Channel MOSFET, 500 V Vdss, 7.6 A continuous drain, 500 mOhm Rds(on) at 2.3 A, TO-252-3 (DPak) surface mount, -55°C to 150°C junction temperature.","salesMarkdown":"The Infineon IPD50R500CE is a 500 V N-channel CoolMOS MOSFET in a TO-252-3 (DPak) surface-mount package. It is designed for high-voltage switching applications where low gate charge and fast switching are needed — think PFC stages, flyback converters, and auxiliary power supplies in industrial and telecom equipment. The 500 V drain-source rating gives the headroom needed for rectified 230 VAC or 400 VDC bus rails with derating for transients. Continuous drain current is rated 7.6 A at 25°C case temperature, which derates with junction temperature; the 57 W power dissipation ceiling sets the thermal budget for the PCB layout. On-resistance is specified at 500 mOhm maximum at 2.3 A with 13 V gate drive. This is a moderate Rds(on) for a 500 V device, which keeps the die small and the gate charge low — 18.7 nC typical at 10 V. The low gate charge means the driver sees a lighter load during switching transitions, which reduces crossover losses at higher frequencies. The 13 V drive voltage for rated Rds(on) is typical for CoolMOS; a standard 12 V gate drive rail will work, but the 13 V figure is the level at which the datasheet guarantees the on-resistance maximum. ## Temperature range and operating environment The 150°C maximum junction allows the designer to push the thermal margin when the case is heatsunk to a hot chassis. Gate threshold voltage maximum is 3.5 V at 200 µA, which is a standard logic-level threshold — a 5 V or 3.3 V gate drive will turn the device on, though the Rds(on) will be higher than the 13 V rated value. ## Package and footprint considerations The IPD50R500CE is supplied in a TO-252-3 (DPak) package with two leads and a tab. The Infineon part marking is PG-TO252-3-344. The surface-mount DPak footprint is standard and shared across many 500 V CoolMOS variants, which simplifies second-sourcing on the layout. Input capacitance is 433 pF at 100 V drain-source, which is low for the voltage class and keeps the drive current requirement modest. ## Lifecycle and supply posture The part is RoHS-compliant per Infineon's standard lead-free plating on the DPak package.","metaTitle":"Infineon IPD50R500CE CoolMOS N-Channel MOSFET, 500 V, 7.6 A","metaDescription":"Infineon IPD50R500CE 500 V N-channel CoolMOS MOSFET in TO-252-3. 500 mOhm Rds(on), 7.6 A continuous drain, -55°C to 150°C junction range.","metaKeywords":null},"attributes":{"series":null,"packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Logic ICs"],"specifications":{"Package":"Bulk","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"3.5V @ 200µA","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"500mOhm @ 2.3A, 13V","Power Dissipation (Max)":"57W (Tc)","Supplier Device Package":"PG-TO252-3-344","Gate Charge (Qg) (Max) @ Vgs":"18.7 nC @ 10 V","Drain to Source Voltage (Vdss)":"500 V","Input Capacitance (Ciss) (Max) @ Vds":"433 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"13V","Current - Continuous Drain (Id) @ 25°C":"7.6A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.39","stockQuantity":0,"priceTiers":[{"qty":772,"price":"$0.39000","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/8eade77c295033a791c1822ed4083a8b.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the closest equivalent or replacement for the IPD50R500CE?","answer":"The IPD50R500CE is an active part with no official replacement announced. For a pin-compatible alternative within the same 500 V CoolMOS family, look at other Infineon DPak devices with similar Rds(on) and current ratings — the IPD50R500CE sits in the 500 mOhm, 7.6 A tier. Confirm the gate charge and threshold voltage match the drive circuit before substituting."},{"question":"Is the IPD50R500CE RoHS compliant?","answer":"The IPD50R500CE is RoHS compliant. Infineon's standard DPak plating is lead-free (NiPdAu or matte tin). No RoHS exemption applies to this part number."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IPD50R500CE","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IPD50R500CE when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}