{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IPD50N10S3L16ATMA1","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IPD50N10S3L16ATMA1","canonicalUrl":"https://icboms.com/infineon/IPD50N10S3L16ATMA1","factsUrl":"https://icboms.com/api/mcp/products/IPD50N10S3L16ATMA1","rawCanonicalId":null},"summary":{"shortDescription":"Infineon OptiMOS series, IPD50N10S3L16ATMA1, N-Channel MOSFET, 100V Vdss, 50A Id, 15mOhm Rds(on) at 10V, 64nC Qg, TO-252-3 (DPak) package, -55°C to 175°C junction temperature.","salesMarkdown":"## Gate charge and switching — 64 nC at 10 V Total gate charge is 64 nC at 10 V. At a 100 kHz switching frequency the gate drive current required is 6.4 mA average — well within a standard MOSFET driver's capability, but the 4180 pF input capacitance at 25 V drain-source means the driver must source a peak current high enough to charge Ciss during the Miller plateau. The drive voltage range spans 4.5 V to 10 V, with the 15 mOhm Rds(on) specified at 10 V; running at 4.5 V gate drive increases the on-resistance above the listed maximum. ## Package and thermal path — TO-252-3 (DPak) Housed in a TO-252-3 (DPak) surface-mount package, supplier code PG-TO252-3-11. The exposed tab on the DPak is the drain connection and the primary thermal path — the 100 W power dissipation rating at case temperature assumes a good solder joint to a copper pour on the PCB. The tab is large enough to wick heat into the board, but the part's 175°C maximum junction temperature gives headroom for high ambient or constrained airflow. Rework is straightforward with hot air: the tab soaks heat evenly, and the three leads are clearly visible for alignment. ## Temperature range and deployment context This exceeds the standard automotive Grade 1 range (-40°C to 150°C) on the high end, suiting it for under-hood electronics, engine bay modules, and industrial motor drives where the local ambient near the heatsink can push past 125°C. The 100 V drain-source rating provides margin for 48 V and 72 V nominal bus systems, including the transients on a 48 V automotive mild-hybrid rail or a 72 V industrial DC bus. ## Sourcing and lifecycle ROHS3 compliant. No official second-source or pin-compatible alternate is listed in the Infineon cross-reference, so dual-sourcing requires a parametric search for a TO-252-3 N-channel MOSFET with matching 100 V, 50 A, and 15 mOhm ratings.","metaTitle":"Infineon IPD50N10S3L16ATMA1 N-Channel MOSFET, 100V 50A","metaDescription":"Infineon IPD50N10S3L16ATMA1 OptiMOS N-channel MOSFET, 100V drain-source, 50A continuous drain, 15mOhm Rds(on) at 10V. Active production, ROHS3 compliant.","metaKeywords":null},"attributes":{"series":"OptiMOS™","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"OptiMOS™","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"2.4V @ 60µA","Operating Temperature":"-55°C ~ 175°C (TJ)","Rds On (Max) @ Id, Vgs":"15mOhm @ 50A, 10V","Power Dissipation (Max)":"100W (Tc)","Supplier Device Package":"PG-TO252-3-11","Gate Charge (Qg) (Max) @ Vgs":"64 nC @ 10 V","Drain to Source Voltage (Vdss)":"100 V","Input Capacitance (Ciss) (Max) @ Vds":"4180 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"4.5V, 10V","Current - Continuous Drain (Id) @ 25°C":"50A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.98","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$1.98000","currency":"USD"},{"qty":10,"price":"$1.64100","currency":"USD"},{"qty":100,"price":"$1.30640","currency":"USD"},{"qty":500,"price":"$1.10538","currency":"USD"},{"qty":1000,"price":"$0.93791","currency":"USD"},{"qty":2500,"price":"$0.89101","currency":"USD"},{"qty":5000,"price":"$0.85751","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/84a9b6bc6ed47145ad10294795e5c000.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the typical gate charge (Qg) of IPD50N10S3L16ATMA1?","answer":"The maximum gate charge is 64 nC at 10 V gate-to-source. This is the total charge needed to switch the MOSFET on; it determines the average gate drive current required at a given switching frequency."},{"question":"Can IPD50N10S3L16ATMA1 be used for PWM motor control?","answer":"Yes. The 100 V drain-source rating and 50 A continuous current handle the bus voltage and phase current of a 48 V or 72 V motor drive. The 64 nC gate charge and 15 mOhm Rds(on) keep switching and conduction losses manageable at PWM frequencies up to several tens of kilohertz, provided the gate driver can supply the peak current to charge the 4180 pF input capacitance during the Miller plateau."},{"question":"Does IPD50N10S3L16ATMA1 have a Pb-free option?","answer":"The part is ROHS3 compliant, which restricts lead and other hazardous substances. The plating and solder terminations are Pb-free per the ROHS directive."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IPD50N10S3L16ATMA1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IPD50N10S3L16ATMA1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}