{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IPD50N03S2L06ATMA1","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IPD50N03S2L06ATMA1","canonicalUrl":"https://icboms.com/infineon/IPD50N03S2L06ATMA1","factsUrl":"https://icboms.com/api/mcp/products/IPD50N03S2L06ATMA1","rawCanonicalId":null},"summary":{"shortDescription":"Infineon OptiMOS™ IPD50N03S2L06ATMA1, N-Channel MOSFET, 30V Vdss, 50A continuous drain, 6.4mOhm Rds(on) @ 10V, AEC-Q101, PG-TO252-3-11 package, -55°C to 175°C.","salesMarkdown":"## 30 V automotive-grade N-channel MOSFET in DPAK Built on a metal-oxide semiconductor process and qualified to AEC-Q101, it is designed for automotive load switching, DC-DC converters, and motor-drive pre-drive stages where junction temperatures can reach 175°C. The on-resistance maxes at 6.4 mOhm with a 10 V gate drive, which keeps conduction losses manageable in a 50 A path — a key figure when sizing heatsinks or PCB copper for a 136 W dissipation budget. Gate charge is 68 nC at 10 V, so the driver stage should be sized to deliver that charge within the switching period without excessive cross-conduction. The part comes in a PG-TO252-3-11 (DPAK) surface-mount package with a tab for thermal transfer to the board. The 4.5 V minimum drive voltage allows logic-level gate signals, though the full Rds(on) spec is characterised at 10 V. Input capacitance of 1900 pF at 25 V drain-source is moderate — it does not demand an aggressive gate driver but does contribute to switching losses at higher frequencies. The 68 nC gate charge at 10 V tells you the total charge the driver must source per cycle; pair it with a driver capable of sourcing that charge in the desired switching time to avoid excessive miller plateau dwell. The PG-TO252-3-11 footprint is standard for DPAK devices, so board-level re-spin is not needed if a second-source candidate shares the same package and pinout. No official second-source alternate is listed in the Infineon cross-reference for this order code.","metaTitle":"IPD50N03S2L06ATMA1 N-Channel MOSFET, 30V 50A AEC-Q101","metaDescription":"Infineon IPD50N03S2L06ATMA1 N-channel OptiMOS MOSFET, 30V Vdss, 50A continuous drain, 6.4mOhm Rds(on), AEC-Q101 automotive grade.","metaKeywords":null},"attributes":{"series":"OptiMOS™","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Grade":"Automotive","Series":"OptiMOS™","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","Qualification":"AEC-Q101","Package / Case":"TO-252-3, DPAK (2 Leads + Tab), SC-63","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"2V @ 85µA","Operating Temperature":"-55°C ~ 175°C (TJ)","Rds On (Max) @ Id, Vgs":"6.4mOhm @ 50A, 10V","Power Dissipation (Max)":"136W (Tc)","Supplier Device Package":"PG-TO252-3-11","Gate Charge (Qg) (Max) @ Vgs":"68 nC @ 10 V","Drain to Source Voltage (Vdss)":"30 V","Input Capacitance (Ciss) (Max) @ Vds":"1900 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"4.5V, 10V","Current - Continuous Drain (Id) @ 25°C":"50A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.66","priceTiers":[{"qty":1,"price":"$1.66000","currency":"USD"},{"qty":10,"price":"$1.37800","currency":"USD"},{"qty":100,"price":"$1.09680","currency":"USD"},{"qty":500,"price":"$0.92808","currency":"USD"},{"qty":1000,"price":"$0.78746","currency":"USD"},{"qty":2500,"price":"$0.74808","currency":"USD"},{"qty":5000,"price":"$0.71996","currency":"USD"},{"qty":12500,"price":"$0.69612","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/7b1a6b2a113d7675e10df8f053c78525.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/IPD50N03S2L06ATMA1/alternatives.json"},"ai":{"faq":[{"question":"What is the equivalent of the IPD50N03S2L06ATMA1?","answer":"The IPD50R950CEAUMA1 is a 500 V CoolMOS™ with 950 mOhm Rds(on) — it is not a functional equivalent for this 30 V, 6.4 mOhm automotive-grade switch. The correct replacement space is any 30 V, 50 A, AEC-Q101 qualified N-channel MOSFET in DPAK with similar gate charge and Rds(on)."},{"question":"What is the IPD50N03S2L06ATMA1's automotive grade?","answer":"It is qualified to AEC-Q101, the automotive-grade discrete semiconductor standard, and carries an Automotive grade designation."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IPD50N03S2L06ATMA1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IPD50N03S2L06ATMA1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-16T10:39:33.080Z","lastPublished":"2026-07-16T10:39:33.080Z","indexable":true}}