{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IPD320N20N3GATMA1","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IPD320N20N3GATMA1","canonicalUrl":"https://icboms.com/infineon/IPD320N20N3GATMA1","factsUrl":"https://icboms.com/api/mcp/products/IPD320N20N3GATMA1","rawCanonicalId":null},"summary":{"shortDescription":"Infineon OptiMOS IPD320N20N3GATMA1, N-Channel MOSFET, 200 V Vdss, 34 A continuous drain, 32 mOhm Rds(on) max at 10 V, 29 nC gate charge, TO-252-3 (DPak) surface-mount package, -55 to 175 °C junction temperature.","salesMarkdown":"## 200 V, 34 A N-channel — the Rds(on) that sets the thermal budget For a 48 V telecom brick or a 72 V battery-powered auxiliary converter, this Rds(on) class keeps the TO-252 package's 136 W power dissipation ceiling in play without pushing into the derating curve prematurely. ## Gate charge and switching — 29 nC at 10 V Total gate charge Qg is 29 nC at Vgs = 10 V, which is moderate for a 200 V / 34 A device in this package. At a 100 kHz switching frequency, the gate driver must supply an average current of about 2.9 mA just to charge and discharge the gate — well within the capability of a standard 1 A gate-driver IC. The input capacitance Ciss of 2350 pF at 100 V Vds gives a rough Miller plateau charge of about 10 nC, so the driver's peak current capability matters more for the turn-on/turn-off edges than the average current. Design the gate-drive loop with a 10 V rail and a low-inductance path to the TO-252 source tab. ## 175 °C junction — headroom for constrained airflow For a power MOSFET in a TO-252 (DPak) surface-mount package, that 175 °C ceiling is the key derating parameter: at 100 °C ambient with minimal forced air, the allowable power dissipation drops from the 136 W Tc-rated maximum to roughly 60–70 W depending on the board copper area under the tab. ## Active lifecycle and compliance — no LTB risk It is ROHS3 compliant. No official second-source or direct replacement is listed on the Infineon cross-reference, so dual-sourcing requires a parametric search for a 200 V, 34 A, 32 mOhm N-channel in a compatible DPak footprint.","metaTitle":"Infineon IPD320N20N3GATMA1 N-Channel MOSFET, 200 V, 34 A","metaDescription":"Infineon IPD320N20N3GATMA1 OptiMOS N-channel MOSFET, 200 V Vdss, 34 A continuous drain, 32 mOhm Rds(on) at 10 V. TO-252-3 package, -55 to 175 °C.","metaKeywords":null},"attributes":{"series":"OptiMOS™","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"OptiMOS™","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 90µA","Operating Temperature":"-55°C ~ 175°C (TJ)","Rds On (Max) @ Id, Vgs":"32mOhm @ 34A, 10V","Power Dissipation (Max)":"136W (Tc)","Supplier Device Package":"PG-TO252-3","Gate Charge (Qg) (Max) @ Vgs":"29 nC @ 10 V","Drain to Source Voltage (Vdss)":"200 V","Input Capacitance (Ciss) (Max) @ Vds":"2350 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"34A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$3.12","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$3.12000","currency":"USD"},{"qty":10,"price":"$2.62300","currency":"USD"},{"qty":100,"price":"$2.12200","currency":"USD"},{"qty":500,"price":"$1.88620","currency":"USD"},{"qty":1000,"price":"$1.61505","currency":"USD"},{"qty":2500,"price":"$1.52074","currency":"USD"},{"qty":5000,"price":"$1.45900","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/d7a53a1ef8bcda69561953c3f6bbc24f.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the Rds(on) of IPD320N20N3GATMA1?","answer":"The maximum on-resistance is 32 mOhm at a drain current of 34 A and a gate-source voltage of 10 V. This is the worst-case value at 25 °C junction temperature; actual Rds(on) increases with temperature per the normalised curve in the datasheet."},{"question":"Is IPD320N20N3GATMA1 RoHS compliant?","answer":"Yes, the part is ROHS3 compliant per the Infineon lifecycle record."},{"question":"What is the equivalent or second-source for IPD320N20N3GATMA1?","answer":"No official Infineon cross-reference or second-source is listed for this MPN. The peer IPD50R950CEAUMA1 is a 500 V, 4.3 A CoolMOS device with a different voltage and current class — it is not a functional replacement. For dual-sourcing, search for a 200 V, 34 A, 32 mOhm N-channel MOSFET in a TO-252 package."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IPD320N20N3GATMA1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IPD320N20N3GATMA1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}