{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IPD30N06S223ATMA2","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IPD30N06S223ATMA2","canonicalUrl":"https://icboms.com/infineon/IPD30N06S223ATMA2","factsUrl":"https://icboms.com/api/mcp/products/IPD30N06S223ATMA2","rawCanonicalId":null},"summary":{"shortDescription":"Infineon OptiMOS™ IPD30N06S223ATMA2, N-Channel MOSFET, 55 V Vdss, 30 A Id, 23 mOhm Rds(on) at 10 V, 32 nC Qg, TO-252-3 (DPak), -55°C to 175°C.","salesMarkdown":"## 55 V, 30 A N-channel — the OptiMOS workhorse in TO-252 The Infineon IPD30N06S223ATMA2 is an N-channel enhancement-mode MOSFET from the OptiMOS™ series, built on a trench-based metal-oxide semiconductor process. At 30 A the I²R loss reaches about 21 W at the rated Rds(on) — the 100 W power-dissipation ceiling at the case provides roughly 4× derating headroom when the junction is held at 25 °C. ## Gate charge and switching speed — 32 nC at 10 V Total gate charge is 32 nC at 10 V gate drive. For a 100 kHz switching frequency the average gate-drive current is 3.2 mA — well within the capability of a standard MOSFET driver IC. The 901 pF input capacitance at 25 V drain bias confirms the gate is not excessively large, so the switching losses stay manageable in hard-switched topologies. The 4 V maximum gate-threshold voltage at 50 µA drain current means the device is fully enhanced only when the gate is driven above 10 V. A 5 V logic-level gate signal will not turn it on hard enough to reach the rated Rds(on); the design should budget a 10 V gate rail or a dedicated gate-driver IC. ## Thermal and environmental range — 175 °C junction The operating junction temperature spans -55 °C to 175 °C. The 175 °C ceiling is typical for automotive-grade power MOSFETs and gives margin in under-hood or industrial enclosures where ambient temperatures exceed 85 °C. The 100 W power dissipation at the case assumes an infinite heatsink; real-world derating depends on the PCB copper area on the TO-252 drain tab. The PG-TO252-3-11 (DPak) package is a surface-mount footprint with a large exposed drain pad. The tab is the primary thermal path — the board layout must connect it to a copper pour of at least 600 mm² to keep the junction below 125 °C at 30 A continuous. ## Active production — no last-time-buy risk Infineon lists it as current production with ROHS3 compliance.","metaTitle":"Infineon IPD30N06S223ATMA2 N-Channel MOSFET, 55V 30A OptiMOS","metaDescription":"Infineon IPD30N06S223ATMA2 N-channel MOSFET, 55V drain-source, 30A continuous, 23mOhm Rds(on) at 10V. Active production, ROHS3 compliant. Quoted to order.","metaKeywords":null},"attributes":{"series":"OptiMOS™","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"OptiMOS™","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 50µA","Operating Temperature":"-55°C ~ 175°C (TJ)","Rds On (Max) @ Id, Vgs":"23mOhm @ 21A, 10V","Power Dissipation (Max)":"100W (Tc)","Supplier Device Package":"PG-TO252-3-11","Gate Charge (Qg) (Max) @ Vgs":"32 nC @ 10 V","Drain to Source Voltage (Vdss)":"55 V","Input Capacitance (Ciss) (Max) @ Vds":"901 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"30A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.28","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$1.28000","currency":"USD"},{"qty":10,"price":"$1.04400","currency":"USD"},{"qty":100,"price":"$0.81210","currency":"USD"},{"qty":500,"price":"$0.68838","currency":"USD"},{"qty":1000,"price":"$0.56076","currency":"USD"},{"qty":2500,"price":"$0.52788","currency":"USD"},{"qty":5000,"price":"$0.50275","currency":"USD"},{"qty":12500,"price":"$0.47954","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/0ecbb5f34cf556643cb87bd35da216ff.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the Rds(on) of IPD30N06S223ATMA2?","answer":"This is the conduction-loss figure used for thermal and efficiency calculations at the rated operating point."},{"question":"Is IPD30N06S223ATMA2 RoHS compliant?","answer":"Yes. Infineon lists the part as ROHS3 compliant, meeting the current EU restriction-of-hazardous-substances directive."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IPD30N06S223ATMA2","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IPD30N06S223ATMA2 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}