{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IPD26N06S2L35ATMA2","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IPD26N06S2L35ATMA2","canonicalUrl":"https://icboms.com/infineon/IPD26N06S2L35ATMA2","factsUrl":"https://icboms.com/api/mcp/products/IPD26N06S2L35ATMA2","rawCanonicalId":null},"summary":{"shortDescription":"Infineon OptiMOS™ IPD26N06S2L35ATMA2, N-Channel MOSFET, 55 V Vdss, 30 A Id, 35 mOhm Rds(on) @ 13 A, 10 V, TO-252-3 surface mount, -55 to 175 °C.","salesMarkdown":"## 55 V / 30 A N-Channel OptiMOS™ — conduction loss and thermal budget The Infineon IPD26N06S2L35ATMA2 is an N-Channel enhancement-mode MOSFET from the OptiMOS™ series, housed in a PG-TO252-3-11 (DPak) surface-mount package. The 35 mOhm maximum on-resistance, specified at 13 A drain current and 10 V gate drive, sets the conduction loss floor for a given load current — a key parameter when sizing the PCB copper area and heatsink for the 68 W maximum power dissipation. With a maximum gate charge of 24 nC at 10 V, the IPD26N06S2L35ATMA2 requires moderate drive current from the gate driver — a 10 V supply delivering 24 nC per switching cycle keeps the driver's average current under 2.4 mA at 100 kHz, well within the capability of most integrated MOSFET drivers. The 621 pF input capacitance at 25 V drain-source confirms the driver's peak current must be sized to charge this capacitance quickly to minimise switching losses. The 2 V maximum gate threshold at 26 µA drain current means the device can be driven from logic-level sources at 4.5 V (the lower drive voltage listed), though the 35 mOhm Rds(on) is guaranteed only at 10 V Vgs. For designs using a 4.5 V gate drive, expect higher on-resistance — factor that into the conduction loss estimate. ## 175 °C junction rating and active lifecycle The -55 °C to 175 °C operating junction temperature range exceeds the typical 150 °C limit of many power MOSFETs, giving additional thermal margin in under-hood automotive or high-ambient industrial enclosures. The 175 °C ceiling means the 30 A continuous current rating at 25 °C case temperature must be derated per the datasheet's thermal impedance curve at higher Tcase. It is RoHS3 compliant.","metaTitle":"Infineon IPD26N06S2L35ATMA2 N-Channel MOSFET, 55V 30A","metaDescription":"Infineon OptiMOS™ IPD26N06S2L35ATMA2 N-Channel MOSFET, 55 V drain-source, 30 A continuous, 35 mOhm Rds(on) at 10 V. TO-252-3 surface mount, -55 to 175°C.","metaKeywords":null},"attributes":{"series":"OptiMOS™","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"OptiMOS™","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"2V @ 26µA","Operating Temperature":"-55°C ~ 175°C (TJ)","Rds On (Max) @ Id, Vgs":"35mOhm @ 13A, 10V","Power Dissipation (Max)":"68W (Tc)","Supplier Device Package":"PG-TO252-3-11","Gate Charge (Qg) (Max) @ Vgs":"24 nC @ 10 V","Drain to Source Voltage (Vdss)":"55 V","Input Capacitance (Ciss) (Max) @ Vds":"621 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"4.5V, 10V","Current - Continuous Drain (Id) @ 25°C":"30A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.0","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$1.00000","currency":"USD"},{"qty":10,"price":"$0.81500","currency":"USD"},{"qty":100,"price":"$0.63400","currency":"USD"},{"qty":500,"price":"$0.53736","currency":"USD"},{"qty":1000,"price":"$0.43774","currency":"USD"},{"qty":2500,"price":"$0.41208","currency":"USD"},{"qty":5000,"price":"$0.39246","currency":"USD"},{"qty":12500,"price":"$0.37434","currency":"USD"},{"qty":25000,"price":"$0.37362","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/83d9c0b3aa4a8a7a5d4da74db2099e77.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the Rds(on) of IPD26N06S2L35ATMA2?","answer":"The maximum Rds(on) is 35 mOhm at 13 A drain current and 10 V gate drive. The device can also be driven at 4.5 V, but on-resistance will be higher than the 35 mOhm figure — the datasheet's typical curves show the Rds(on) vs Vgs characteristic for that condition."},{"question":"What package does IPD26N06S2L35ATMA2 come in?","answer":"It is supplied in a TO-252-3 (DPak) surface-mount package, specifically the PG-TO252-3-11 variant. The shipping options include Tape & Reel and Cut Tape."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IPD26N06S2L35ATMA2","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IPD26N06S2L35ATMA2 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}