{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IPD031N06L3GATMA1","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IPD031N06L3GATMA1","canonicalUrl":"https://icboms.com/infineon/IPD031N06L3GATMA1","factsUrl":"https://icboms.com/api/mcp/products/IPD031N06L3GATMA1","rawCanonicalId":null},"summary":{"shortDescription":"Infineon OptiMOS™ IPD031N06L3GATMA1, N-Channel MOSFET, 60 V drain-source, 100 A continuous drain, 3.1 mOhm Rds(on) at 10 V, 79 nC gate charge, PG-TO252-3 package, -55 to 175 °C junction temperature.","salesMarkdown":"## 3.1 mOhm Rds(on) at 10 V — what it buys the power stage The Infineon IPD031N06L3GATMA1 is a 60 V, 100 A N-channel OptiMOS MOSFET in a PG-TO252-3 (DPak) surface-mount package. Gate charge is 79 nC at 4.5 V. Input capacitance is 13000 pF at 30 V drain-source. ## 175 °C junction — thermal headroom for tight layouts Rated junction temperature spans -55 °C to 175 °C. Power dissipation is rated at 167 W at case temperature — a number that assumes an infinite heatsink. In practice the board copper and airflow set the real limit; the 175 °C junction gives a few more degrees of headroom before the Rds(on) climbs with temperature. ROHS3 compliant. ## Sourcing and fit for the BOM The 3.1 mOhm Rds(on) at 10 V and 79 nC gate charge are the two numbers that decide whether this part fits a given power stage; the 175 °C junction rating adds thermal margin for dense layouts.","metaTitle":"IPD031N06L3GATMA1 OptiMOS N-Ch 60V 100A TO252-3 MOSFET","metaDescription":"Infineon IPD031N06L3GATMA1 N-channel 60V 100A MOSFET, 3.1mOhm Rds(on) at 10V, 79nC gate charge. Active lifecycle, ROHS3.","metaKeywords":null},"attributes":{"series":"OptiMOS™","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"OptiMOS™","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"2.2V @ 93µA","Operating Temperature":"-55°C ~ 175°C (TJ)","Rds On (Max) @ Id, Vgs":"3.1mOhm @ 100A, 10V","Power Dissipation (Max)":"167W (Tc)","Supplier Device Package":"PG-TO252-3","Gate Charge (Qg) (Max) @ Vgs":"79 nC @ 4.5 V","Drain to Source Voltage (Vdss)":"60 V","Input Capacitance (Ciss) (Max) @ Vds":"13000 pF @ 30 V","Drive Voltage (Max Rds On, Min Rds On)":"4.5V, 10V","Current - Continuous Drain (Id) @ 25°C":"100A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$2.8","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$2.80000","currency":"USD"},{"qty":10,"price":"$2.32800","currency":"USD"},{"qty":100,"price":"$1.85270","currency":"USD"},{"qty":500,"price":"$1.56768","currency":"USD"},{"qty":1000,"price":"$1.33015","currency":"USD"},{"qty":2500,"price":"$1.26364","currency":"USD"},{"qty":5000,"price":"$1.21614","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/56821ecd714298467b20e020e8fda71a.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What are the Rds(on) and gate charge of IPD031N06L3GATMA1?","answer":"Maximum Rds(on) is 3.1 mOhm at 100 A drain current with 10 V gate drive. Maximum gate charge is 79 nC at 4.5 V gate-source voltage."},{"question":"Is IPD031N06L3GATMA1 obsolete or End-of-Life?","answer":"No."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IPD031N06L3GATMA1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IPD031N06L3GATMA1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}