{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IPB80N06S209ATMA2","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IPB80N06S209ATMA2","canonicalUrl":"https://icboms.com/infineon/IPB80N06S209ATMA2","factsUrl":"https://icboms.com/api/mcp/products/IPB80N06S209ATMA2","rawCanonicalId":null},"summary":{"shortDescription":"Infineon OptiMOS™ N-Channel MOSFET, IPB80N06S209ATMA2, 55 V drain-source, 80 A continuous drain, 8.8 mOhm Rds(on) at 10 V, 190 W power dissipation, TO-263-3 (PG-TO263-3-2) surface-mount package, -55°C to 175°C junction temperature.","salesMarkdown":"## 80 A, 55 V N-channel — the BOM-fit numbers The TO-263-3 (D²Pak) package with an exposed tab handles the 190 W power dissipation — the tab is the thermal path, so the PCB copper area under it sets the real-world current ceiling. ## Gate drive and switching profile Gate charge is 80 nC at 10 V gate drive, with a ±20 V Vgs max rating that gives headroom for a 12 V gate-drive rail. Input capacitance is 2360 pF at 25 V drain-source. ## Temperature range and environment The 175 °C ceiling is higher than the typical 150 °C limit on many power MOSFETs — useful if the thermal loop runs hot or the load is pulsed. The part is ROHS3 compliant.","metaTitle":"IPB80N06S209ATMA2 OptiMOS N-Ch MOSFET, 55V, 80A, TO-263","metaDescription":"Infineon IPB80N06S209ATMA2 OptiMOS N-channel MOSFET, 55V drain-source, 80A continuous, 8.8mOhm Rds(on). Active production, ROHS3 compliant.","metaKeywords":null},"attributes":{"series":"OptiMOS™","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"OptiMOS™","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","Package / Case":"TO-263-3, D²Pak (2 Leads + Tab), TO-263AB","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 125µA","Operating Temperature":"-55°C ~ 175°C (TJ)","Rds On (Max) @ Id, Vgs":"8.8mOhm @ 50A, 10V","Power Dissipation (Max)":"190W (Tc)","Supplier Device Package":"PG-TO263-3-2","Gate Charge (Qg) (Max) @ Vgs":"80 nC @ 10 V","Drain to Source Voltage (Vdss)":"55 V","Input Capacitance (Ciss) (Max) @ Vds":"2360 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"80A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$2.63","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$2.63000","currency":"USD"},{"qty":10,"price":"$2.18800","currency":"USD"},{"qty":100,"price":"$1.74130","currency":"USD"},{"qty":500,"price":"$1.47336","currency":"USD"},{"qty":1000,"price":"$1.24856","currency":"USD"},{"qty":2000,"price":"$1.18614","currency":"USD"},{"qty":5000,"price":"$1.14154","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/9a158178f551c72bd6e0ae895501ac9d.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the maximum operating temperature of IPB80N06S209ATMA2?","answer":"The junction temperature range is -55 °C to 175 °C, suitable for automotive and industrial environments."},{"question":"What are the alternatives to IPB80N06S209ATMA2?","answer":"The IPD50R950CEAUMA1 is a CoolMOS™ N-channel MOSFET but at 500 V drain-source — a different voltage class and not a functional replacement."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IPB80N06S209ATMA2","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IPB80N06S209ATMA2 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}