{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IPB70N10S3L12ATMA1","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IPB70N10S3L12ATMA1","canonicalUrl":"https://icboms.com/infineon/IPB70N10S3L12ATMA1","factsUrl":"https://icboms.com/api/mcp/products/IPB70N10S3L12ATMA1","rawCanonicalId":null},"summary":{"shortDescription":"Infineon OptiMOS™ series, N-Channel MOSFET, 100 V drain-source, 70 A continuous drain at 25°C, 11.8 mOhm Rds(on) at 70 A and 10 V, 80 nC gate charge, -55°C to 175°C junction temperature, surface-mount TO-263-3 (D²Pak) package.","salesMarkdown":"## Gate charge and switching frequency — sizing the driver The IPB70N10S3L12ATMA1: Total gate charge is 80 nC at 10 V Vgs. The 11.8 mOhm Rds(on) is specified at 10 V drive; a 4.5 V logic-level drive is also supported for lower-voltage gate signals, though on-resistance will rise above the 10 V figure. ## Temperature grade — full military range in a power package Maximum power dissipation is 125 W at case temperature, with derating above 25°C per the datasheet's thermal curve — the D²Pak tab's solder pad area on the PCB sets the real thermal resistance.","metaTitle":"Infineon IPB70N10S3L12ATMA1 N-Channel MOSFET, 100V, 70A","metaDescription":"Infineon OptiMOS N-channel 100V 70A MOSFET in D²Pak (TO-263-3). 11.8 mOhm Rds(on) at 10V Vgs, 80 nC gate charge, -55°C to 175°C. Active, ROHS3.","metaKeywords":null},"attributes":{"series":"OptiMOS™","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"OptiMOS™","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","Package / Case":"TO-263-3, D²Pak (2 Leads + Tab), TO-263AB","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"2.4V @ 83µA","Operating Temperature":"-55°C ~ 175°C (TJ)","Rds On (Max) @ Id, Vgs":"11.8mOhm @ 70A, 10V","Power Dissipation (Max)":"125W (Tc)","Supplier Device Package":"PG-TO263-3-2","Gate Charge (Qg) (Max) @ Vgs":"80 nC @ 10 V","Drain to Source Voltage (Vdss)":"100 V","Input Capacitance (Ciss) (Max) @ Vds":"5550 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"4.5V, 10V","Current - Continuous Drain (Id) @ 25°C":"70A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$2.85","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$2.85000","currency":"USD"},{"qty":10,"price":"$2.37100","currency":"USD"},{"qty":100,"price":"$1.88720","currency":"USD"},{"qty":500,"price":"$1.59684","currency":"USD"},{"qty":1000,"price":"$1.35489","currency":"USD"},{"qty":2000,"price":"$1.28715","currency":"USD"},{"qty":5000,"price":"$1.23876","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/2fe9c9120da9744fb89abc20bcd9334a.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the Rds(on) of IPB70N10S3L12ATMA1?","answer":"Maximum on-resistance is 11.8 mOhm at 70 A drain current with 10 V gate-to-source voltage."},{"question":"Is IPB70N10S3L12ATMA1 RoHS compliant?","answer":"Yes, it is ROHS3 compliant per the Infineon lifecycle record."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IPB70N10S3L12ATMA1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IPB70N10S3L12ATMA1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}