{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IPB70N10S312ATMA1","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IPB70N10S312ATMA1","canonicalUrl":"https://icboms.com/infineon/IPB70N10S312ATMA1","factsUrl":"https://icboms.com/api/mcp/products/IPB70N10S312ATMA1","rawCanonicalId":null},"summary":{"shortDescription":"Infineon OptiMOS IPB70N10S312ATMA1, N-Channel MOSFET, 100 V Vdss, 70 A Id, 11.3 mOhm Rds(on) @ 70 A, 10 V, PG-TO263-3-2 package, -55°C to 175°C junction temperature.","salesMarkdown":"The 66 nC total gate charge at 10 V is moderate for this current class; a gate driver delivering 1 A can switch it in about 66 ns, making it suitable for hard-switching converters up to the 100 kHz range. ## Junction temperature range — where it fits The 175°C ceiling is 25°C above the typical industrial 150°C limit, giving extra headroom in under-hood automotive, high-ambient industrial enclosures, or power supplies with tight thermal budgets. The 4 V maximum gate threshold at 83 µA drain current means the device is fully enhanced with a standard 10 V gate drive; at lower gate voltages the Rds(on) will be higher than the 11.3 mOhm spec. ## Package and footprint — TO-263-3 (D²Pak) Housed in the PG-TO263-3-2 package — a surface-mount D²Pak with two leads plus the exposed drain tab. The tab is the primary thermal path; the PCB copper area under it sets the junction-to-ambient thermal resistance. The 0.50 mm lead pitch and standard footprint are shared across many 100 V N-channel MOSFETs, so layout reuse across second-source candidates is straightforward.","metaTitle":"IPB70N10S312ATMA1 N-Channel MOSFET 100V 70A TO-263-3","metaDescription":"Infineon IPB70N10S312ATMA1 OptiMOS N-channel MOSFET, 100V Vdss, 70A Id, 11.3mOhm Rds(on). Active production, ROHS3 compliant.","metaKeywords":null},"attributes":{"series":"OptiMOS™","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"OptiMOS™","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","Package / Case":"TO-263-3, D²Pak (2 Leads + Tab), TO-263AB","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 83µA","Operating Temperature":"-55°C ~ 175°C (TJ)","Rds On (Max) @ Id, Vgs":"11.3mOhm @ 70A, 10V","Power Dissipation (Max)":"125W (Tc)","Supplier Device Package":"PG-TO263-3-2","Gate Charge (Qg) (Max) @ Vgs":"66 nC @ 10 V","Drain to Source Voltage (Vdss)":"100 V","Input Capacitance (Ciss) (Max) @ Vds":"4355 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"70A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$2.9","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$2.90000","currency":"USD"},{"qty":10,"price":"$2.41000","currency":"USD"},{"qty":100,"price":"$1.91790","currency":"USD"},{"qty":500,"price":"$1.62284","currency":"USD"},{"qty":1000,"price":"$1.37695","currency":"USD"},{"qty":2000,"price":"$1.30811","currency":"USD"},{"qty":5000,"price":"$1.25893","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/c6ca4235372ae9f2e46009ee29a3f243.pdf","sourceUrl":null},"ai":{"faq":[{"question":"Is the IPB70N10S312ATMA1 suitable for high-temperature environments?","answer":"Yes. The 175°C maximum gives 25°C of margin above the typical industrial 150°C limit."},{"question":"Is the IPB70N10S312ATMA1 lead-free and RoHS compliant?","answer":"Yes, it is ROHS3 compliant, meaning it meets the latest RoHS directive without exemptions for lead, mercury, cadmium, and other restricted substances."},{"question":"What is the difference between the IPB70N10S312ATMA1 and the IPD50R950CEAUMA1?","answer":"The IPD50R950CEAUMA1 is a 500 V CoolMOS device rated at 4.3 A with 950 mOhm Rds(on), while the IPB70N10S312ATMA1 is a 100 V OptiMOS rated at 70 A with 11.3 mOhm. They serve different voltage and current classes — the IPD50R950CEAUMA1 is for high-voltage auxiliary supplies, the IPB70N10S312ATMA1 for low-voltage high-current power stages. They are not direct replacements."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IPB70N10S312ATMA1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IPB70N10S312ATMA1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}