{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IPB65R420CFD","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IPB65R420CFD","canonicalUrl":"https://icboms.com/infineon/IPB65R420CFD","factsUrl":"https://icboms.com/api/mcp/products/IPB65R420CFD","rawCanonicalId":null},"summary":{"shortDescription":"Infineon CoolMOS™ IPB65R420CFD, N-Channel MOSFET, 650 V Vdss, 8.7 A Id, 420 mOhm Rds(on) @ 10 V, 31.5 nC Qg, TO-263-3 (D²Pak) surface mount, -55°C to 150°C.","salesMarkdown":"In a 2 A offline flyback primary switch, that resistance contributes roughly 1.7 W of I²R loss at full load — within the 83.3 W package power dissipation ceiling, but the designer must account for the Rds(on) positive temperature coefficient when the junction climbs above 25°C. ## Gate charge and switching loss budget Total gate charge is 31.5 nC at 10 V, with an input capacitance of 870 pF measured at 100 V drain-source. For a hard-switched converter running at 100 kHz, the gate-driver current required to charge and discharge Qg in the dead time is about 3.15 mA average — well within the capability of a standard MOSFET driver IC. The low Qg relative to the 650 V class keeps crossover switching losses manageable, which matters for PFC stages and LLC converters where the MOSFET sees both hard turn-on and zero-voltage transitions. ## Package and thermal interface The part ships in a TO-263-3 (D²Pak) surface-mount package, supplier device code PG-TO263-3-2. ## Lifecycle and compliance It is ROHS3 compliant. No official second-source or pin-compatible alternate is listed in the manufacturer's cross-reference, so dual-sourcing would require qualification of a functionally equivalent CoolMOS or competitor device.","metaTitle":"IPB65R420CFD CoolMOS N-Channel MOSFET, 650 V, 420 mOhm","metaDescription":"Infineon IPB65R420CFD CoolMOS N-channel MOSFET: 650 V Vdss, 420 mOhm Rds(on) at 10 V, 8.7 A Id, 31.5 nC Qg. Active production, ROHS3.","metaKeywords":null},"attributes":{"series":"CoolMOS™","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"CoolMOS™","Package":"Bulk","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","Package / Case":"TO-263-3, D²Pak (2 Leads + Tab), TO-263AB","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4.5V @ 300µA","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"420mOhm @ 3.4A, 10V","Power Dissipation (Max)":"83.3W (Tc)","Supplier Device Package":"PG-TO263-3-2","Gate Charge (Qg) (Max) @ Vgs":"31.5 nC @ 10 V","Drain to Source Voltage (Vdss)":"650 V","Input Capacitance (Ciss) (Max) @ Vds":"870 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"8.7A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.75","stockQuantity":0,"priceTiers":[{"qty":402,"price":"$0.75000","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/50861b1656f0c39c6e0e2dd8351b418f.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the Rds(on) of IPB65R420CFD?","answer":"The maximum on-resistance is 420 mOhm at a drain current of 3.4 A and a gate-source voltage of 10 V."},{"question":"What is the gate charge of IPB65R420CFD?","answer":"Total gate charge is 31.5 nC at a 10 V gate drive voltage."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IPB65R420CFD","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IPB65R420CFD when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}