{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IPB65R380C6","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IPB65R380C6","canonicalUrl":"https://icboms.com/infineon/IPB65R380C6","factsUrl":"https://icboms.com/api/mcp/products/IPB65R380C6","rawCanonicalId":null},"summary":{"shortDescription":"Infineon CoolMOS™ IPB65R380C6, N-Channel MOSFET, 650 V Vdss, 10.6 A Id, 380 mOhm Rds(on) @ 10 V, 39 nC Qg, TO-263-3 (D²Pak), -55°C to 150°C.","salesMarkdown":"The 39 nC total gate charge at 10 V is the figure that determines the gate-driver current needed for a target switching frequency. A 39 nC gate charge switched at 100 kHz draws 3.9 mA average from the driver, well within the capability of most half-bridge gate-drive ICs. The input capacitance of 710 pF at 100 V Vds helps estimate the driver's peak current requirement during the Miller plateau. ## Package and thermal — the D²Pak footprint The IPB65R380C6 is supplied in the TO-263-3 (D²Pak) surface-mount package, supplier device code PG-TO263-3-2. The exposed metal tab on the bottom is the drain connection and the primary thermal path — the PCB copper area under the tab sets the junction-to-ambient thermal resistance. The 83 W maximum power dissipation at case temperature assumes a good thermal connection to a heatsink or large copper pour. The gate-source voltage rating is ±20 V absolute maximum, so a 10 V gate drive is within the safe operating area with margin for ringing. ROHS3 compliant. No official successor or replacement has been issued, which is consistent with an active part that remains in the portfolio.","metaTitle":"IPB65R380C6 CoolMOS N-Channel MOSFET, 650 V, 10.6 A, D²Pak","metaDescription":"Infineon IPB65R380C6 CoolMOS N-channel MOSFET: 650 V Vdss, 10.6 A Id, 380 mOhm Rds(on), 39 nC Qg. Active, ROHS3.","metaKeywords":null},"attributes":{"series":"CoolMOS™","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"CoolMOS™","Package":"Bulk","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","Package / Case":"TO-263-3, D²Pak (2 Leads + Tab), TO-263AB","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"3.5V @ 320µA","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"380mOhm @ 3.2A, 10V","Power Dissipation (Max)":"83W (Tc)","Supplier Device Package":"PG-TO263-3-2","Gate Charge (Qg) (Max) @ Vgs":"39 nC @ 10 V","Drain to Source Voltage (Vdss)":"650 V","Input Capacitance (Ciss) (Max) @ Vds":"710 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"10.6A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.85","stockQuantity":0,"priceTiers":[{"qty":352,"price":"$0.85000","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/d2f3f1e50fb9ab4976e7a9e3cf74ccd3.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the gate charge of IPB65R380C6?","answer":"The total gate charge (Qg) at 10 V gate drive is 39 nC maximum. This value is used to calculate the gate-driver current requirement for the target switching frequency."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IPB65R380C6","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IPB65R380C6 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}