{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IPB65R125C7ATMA2","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IPB65R125C7ATMA2","canonicalUrl":"https://icboms.com/infineon/IPB65R125C7ATMA2","factsUrl":"https://icboms.com/api/mcp/products/IPB65R125C7ATMA2","rawCanonicalId":null},"summary":{"shortDescription":"Infineon CoolMOS™ C7, IPB65R125C7ATMA2, N-Channel MOSFET, 650 V Vdss, 18 A Id, 125 mOhm Rds(on) @ 10 V, 35 nC Qg, PG-TO263-3, -55°C to 150°C.","salesMarkdown":"It switches in a PG-TO263-3 (D²Pak) surface-mount package — the tab is the drain, and the two leads are gate and source. Rds(on) is specified at 125 mOhm maximum with 10 V gate drive at 8.9 A. This is the conduction-loss floor for a hard-switched topology. The 35 nC total gate charge at 10 V means the driver needs to source about 3.5 mA per 100 kHz of switching frequency — a moderate load that a standard gate-drive IC handles without extra buffering. Input capacitance Ciss is 1670 pF typical at 400 V drain-source. That capacitance, combined with the gate charge, sets the turn-on delay and the driver's peak current requirement. For a 100 kHz LLC or PFC stage, the switching losses stay within the thermal budget of the TO-263-3 package. Store the reels dry — the MSL level for this package is typically MSL 1 or 3; confirm the bake requirement before reflow if the seal is broken.","metaTitle":"IPB65R125C7ATMA2 CoolMOS C7 N-Ch 650V 18A MOSFET","metaDescription":"Infineon IPB65R125C7ATMA2 N-channel 650V 18A MOSFET, 125mOhm Rds(on), 35nC gate charge. Active production, ROHS3.","metaKeywords":null},"attributes":{"series":"CoolMOS™ C7","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"CoolMOS™ C7","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","Package / Case":"TO-263-3, D²Pak (2 Leads + Tab), TO-263AB","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 440µA","Operating Temperature":"-55°C ~ 150°C (TJ)","Rds On (Max) @ Id, Vgs":"125mOhm @ 8.9A, 10V","Power Dissipation (Max)":"101W (Tc)","Supplier Device Package":"PG-TO263-3","Gate Charge (Qg) (Max) @ Vgs":"35 nC @ 10 V","Drain to Source Voltage (Vdss)":"650 V","Input Capacitance (Ciss) (Max) @ Vds":"1670 pF @ 400 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"18A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$4.91","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$4.91000","currency":"USD"},{"qty":10,"price":"$4.12200","currency":"USD"},{"qty":100,"price":"$3.33460","currency":"USD"},{"qty":500,"price":"$2.96406","currency":"USD"},{"qty":1000,"price":"$2.53798","currency":"USD"},{"qty":2000,"price":"$2.38978","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/fd32b84c6e48111b0c0c2f411a8d95c7.pdf","sourceUrl":null},"ai":{"faq":[{"question":"Can I use IPB65R125C7ATMA2 in a 600 V application?","answer":"Yes. The drain-to-source voltage rating is 650 V, which provides 50 V of headroom above a 600 V rail. That margin covers switching transients and ripple without pushing the device into avalanche."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IPB65R125C7ATMA2","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IPB65R125C7ATMA2 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}