{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IPB35N10S3L26ATMA1","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IPB35N10S3L26ATMA1","canonicalUrl":"https://icboms.com/infineon/IPB35N10S3L26ATMA1","factsUrl":"https://icboms.com/api/mcp/products/IPB35N10S3L26ATMA1","rawCanonicalId":null},"summary":{"shortDescription":"Infineon OptiMOS™ IPB35N10S3L26ATMA1, N-Channel MOSFET, 100 V Vdss, 35 A continuous drain, 26.3 mOhm Rds(on) at 10 V gate drive, PG-TO263-3 (D2PAK) surface mount, AEC-Q101 qualified, -55°C to 175°C junction temperature.","salesMarkdown":"## 100 V, 35 A N-channel in D2PAK — automotive-grade switching The Infineon IPB35N10S3L26ATMA1 is an N-channel enhancement-mode MOSFET from the OptiMOS™ family, built on a trench-FET process that balances low on-resistance with fast switching. ## On-resistance and gate charge — switching loss trade-off The 26.3 mOhm Rds(on) at 10 V gate drive is the key conduction loss spec; at 35 A the dissipation is I²R = 32.2 W, which needs to be managed against the 71 W power dissipation limit at the case. The gate charge (Qg) is 39 nC at 10 V — a moderate value that keeps the gate-drive power reasonable for switching frequencies up to several tens of kHz without requiring a high-current driver. The input capacitance (Ciss) is 2700 pF at 25 V drain bias, which gives a rough figure for the Miller plateau charge and the switching speed trade-off. ## Lifecycle and sourcing It is ROHS3 compliant.","metaTitle":"Infineon IPB35N10S3L26ATMA1 N-Channel MOSFET, 100V 35A D2PAK","metaDescription":"Infineon IPB35N10S3L26ATMA1 OptiMOS™ N-channel MOSFET, 100V Vdss, 35A continuous drain, 26.3mOhm Rds(on). AEC-Q101 qualified, -55°C to 175°C junction range.","metaKeywords":null},"attributes":{"series":"Automotive, AEC-Q101, OptiMOS™","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"Automotive, AEC-Q101, OptiMOS™","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","Package / Case":"TO-263-3, D²Pak (2 Leads + Tab), TO-263AB","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"2.4V @ 39µA","Operating Temperature":"-55°C ~ 175°C (TJ)","Rds On (Max) @ Id, Vgs":"26.3mOhm @ 35A, 10V","Power Dissipation (Max)":"71W (Tc)","Supplier Device Package":"PG-TO263-3","Gate Charge (Qg) (Max) @ Vgs":"39 nC @ 10 V","Drain to Source Voltage (Vdss)":"100 V","Input Capacitance (Ciss) (Max) @ Vds":"2700 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"4.5V, 10V","Current - Continuous Drain (Id) @ 25°C":"35A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$2.07","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$2.46000","currency":"USD"},{"qty":10,"price":"$2.20600","currency":"USD"},{"qty":100,"price":"$1.77280","currency":"USD"},{"qty":500,"price":"$1.45656","currency":"USD"},{"qty":1000,"price":"$1.21380","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/9e68fde164a14fa4bb818f88701364a8.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the equivalent or second-source for IPB35N10S3L26ATMA1?","answer":"The peer IPD50R950CEAUMA1 is a different voltage class (500 V, 4.3 A, 950 mOhm) from the CoolMOS™ CE family — it is not a functional replacement for this 100 V, 35 A, 26.3 mOhm device. For a drop-in substitute, confirm the package (D2PAK), Rds(on), and gate charge against your BOM requirements."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IPB35N10S3L26ATMA1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IPB35N10S3L26ATMA1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}