{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IPB200N25N3GATMA1","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IPB200N25N3GATMA1","canonicalUrl":"https://icboms.com/infineon/IPB200N25N3GATMA1","factsUrl":"https://icboms.com/api/mcp/products/IPB200N25N3GATMA1","rawCanonicalId":null},"summary":{"shortDescription":"Infineon OptiMOS™ IPB200N25N3GATMA1, N-Channel MOSFET, 250V Vds, 64A Id, 20mOhm Rds(on) @ 10V Vgs, 86nC Qg, TO-263-3 (D2PAK), -55°C to 175°C.","salesMarkdown":"## 250V, 64A power switch for DC-DC and motor drives The IPB200N25N3GATMA1: The 20mOhm typical on-resistance at 10V gate drive keeps conduction losses low — at 64A the I²R dissipation hits 82W, which the 300W package power rating can handle with adequate heatsinking. Gate charge is 86 nC at 10 V. ## D2PAK thermal and layout checklist The TO-263-3 (D2PAK) package has an exposed drain tab. The PCB copper area under the tab sets the thermal resistance. Gate drive voltage is specified at 10V for minimum Rds(on) — the ±20V Vgs max allows headroom for gate overdrive in noisy environments, but the 4V threshold at 270µA means the device is fully off below 4V and requires a clean gate signal to avoid partial conduction. Input capacitance Ciss is 7100pF at 100V drain bias — this dominates the gate-drive current requirement at switching edges; a 10Ω gate resistor gives a 71ns RC time constant, which limits dV/dt and reduces EMI without excessive switching loss. ## Sourcing and production status The OptiMOS™ 3 series is Infineon's established 250V trench technology — no direct replacement announced, but the part is current-production and can be dual-sourced with other 250V N-channel D2PAK MOSFETs sharing similar Rds(on) and Qg specs after verifying the gate drive and thermal requirements.","metaTitle":"IPB200N25N3GATMA1 MOSFET N-Ch 250V 64A D2PAK OptiMOS","metaDescription":"Infineon IPB200N25N3GATMA1 N-channel MOSFET, 250V Vds, 64A Id, 20mOhm Rds(on) at 10V Vgs. Active production, ROHS3 compliant.","metaKeywords":null},"attributes":{"series":"OptiMOS™","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"OptiMOS™","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","Package / Case":"TO-263-3, D²Pak (2 Leads + Tab), TO-263AB","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 270µA","Operating Temperature":"-55°C ~ 175°C (TJ)","Rds On (Max) @ Id, Vgs":"20mOhm @ 64A, 10V","Power Dissipation (Max)":"300W (Tc)","Supplier Device Package":"PG-TO263-3","Gate Charge (Qg) (Max) @ Vgs":"86 nC @ 10 V","Drain to Source Voltage (Vdss)":"250 V","Input Capacitance (Ciss) (Max) @ Vds":"7100 pF @ 100 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"64A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$7.89","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$7.89000","currency":"USD"},{"qty":10,"price":"$6.76300","currency":"USD"},{"qty":100,"price":"$5.63590","currency":"USD"},{"qty":500,"price":"$4.97284","currency":"USD"},{"qty":1000,"price":"$4.47555","currency":"USD"},{"qty":2000,"price":"$4.19376","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/ba539323afbdf7599604305ec044fa57.pdf","sourceUrl":null},"ai":{"faq":[],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IPB200N25N3GATMA1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IPB200N25N3GATMA1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}