{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IPB180N04S401ATMA1","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IPB180N04S401ATMA1","canonicalUrl":"https://icboms.com/infineon/IPB180N04S401ATMA1","factsUrl":"https://icboms.com/api/mcp/products/IPB180N04S401ATMA1","rawCanonicalId":null},"summary":{"shortDescription":"Infineon OptiMOS™ IPB180N04S401ATMA1, N-Channel MOSFET, 40 V Vdss, 180 A Id, 1.3 mOhm Rds(on) at 10 V, 176 nC Qg, TO-263-7 (D²Pak) package, -55°C to 175°C.","salesMarkdown":"## 40 V, 180 A N-channel — the load-switch floor The 1.3 mOhm max on-resistance at 100 A, 10 V drive is the headline number — it sets the conduction-loss floor for a high-current load switch or OR-ing application. The TO-263-7 (D²Pak) package with six leads plus a tab gives the thermal path to the board; the exposed pad is the primary heat-removal route. ## Gate charge and switching — what 176 nC means for the driver Total gate charge is 176 nC at 10 V. The input capacitance of 14000 pF at 25 V Vds reinforces the need for a driver stage between the PWM controller and the gate. ## Thermal budget — 188 W dissipation ceiling In a real board, the junction-to-ambient thermal resistance depends on the copper area under the D²Pak tab and any forced airflow. ROHS3 compliant.","metaTitle":"IPB180N04S401ATMA1 OptiMOS N-Ch 40V 180A MOSFET, TO-263-7","metaDescription":"Infineon IPB180N04S401ATMA1 N-channel MOSFET, 40V Vdss, 180A Id, 1.3mOhm Rds(on) at 10V. Active production, ROHS3 compliant.","metaKeywords":null},"attributes":{"series":"OptiMOS™","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"OptiMOS™","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","Package / Case":"TO-263-7, D²Pak (6 Leads + Tab)","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 140µA","Operating Temperature":"-55°C ~ 175°C (TJ)","Rds On (Max) @ Id, Vgs":"1.3mOhm @ 100A, 10V","Power Dissipation (Max)":"188W (Tc)","Supplier Device Package":"PG-TO263-7-3","Gate Charge (Qg) (Max) @ Vgs":"176 nC @ 10 V","Drain to Source Voltage (Vdss)":"40 V","Input Capacitance (Ciss) (Max) @ Vds":"14000 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"180A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$3.93","priceTiers":[{"qty":1,"price":"$3.70000","currency":"USD"},{"qty":10,"price":"$3.10800","currency":"USD"},{"qty":100,"price":"$2.51450","currency":"USD"},{"qty":500,"price":"$2.23508","currency":"USD"},{"qty":1000,"price":"$1.91380","currency":"USD"},{"qty":2000,"price":"$1.80204","currency":"USD"},{"qty":5000,"price":"$1.72888","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/0fc0a27051713c0e3f2ca8261e757b8d.pdf","sourceUrl":null,"alternativesUrl":"https://icboms.com/api/mcp/products/IPB180N04S401ATMA1/alternatives.json"},"ai":{"faq":[{"question":"What is the difference between IPB180N04S401ATMA1 and IPD50R950CEAUMA1?","answer":"They are not functional substitutes. The IPD50R950CEAUMA1 is a 500 V CoolMOS™ device rated for 4.3 A with 950 mOhm Rds(on) — a high-voltage, low-current switch. The IPB180N04S401ATMA1 is a 40 V, 180 A low-voltage, high-current part. The only shared parameter is the ±20 V gate maximum."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IPB180N04S401ATMA1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IPB180N04S401ATMA1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-20T14:34:45.345Z","lastPublished":"2026-07-20T14:34:45.345Z","indexable":true}}