{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IPB180N03S4L01ATMA1","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IPB180N03S4L01ATMA1","canonicalUrl":"https://icboms.com/infineon/IPB180N03S4L01ATMA1","factsUrl":"https://icboms.com/api/mcp/products/IPB180N03S4L01ATMA1","rawCanonicalId":null},"summary":{"shortDescription":"Infineon OptiMOS™ N-Channel MOSFET, 30 V Vdss, 180 A continuous drain, 1.05 mOhm Rds(on) at 10 V, 239 nC gate charge, TO-263-7 (D²Pak) surface mount, -55°C to 175°C junction temperature.","salesMarkdown":"## 1.05 mOhm Rds(on) — the conduction loss floor The IPB180N03S4L01ATMA1 N-channel MOSFET has a 1.05 mOhm Rds(on) at 100 A and 10 V, with a 188 W power dissipation ceiling. ## Gate charge and drive budget The 239 nC total gate charge at 10 V sets the drive current requirement. The 17600 pF input capacitance at 25 V drain-source means the driver must source enough peak current during the Miller plateau. ## Package and thermal path The TO-263-7 (D²Pak with 6 leads plus tab) surface-mount package exposes the drain tab for heat sinking. The 2.2 V gate threshold at 140 µA is low enough for logic-level drive, but the 4.5 V minimum drive voltage for rated Rds(on) means a 3.3 V logic gate will not fully enhance the channel.","metaTitle":"Infineon IPB180N03S4L01ATMA1 N-Channel MOSFET, 30 V, 180 A","metaDescription":"Infineon OptiMOS™ N-channel MOSFET, 30 V Vdss, 180 A continuous drain, 1.05 mOhm Rds(on) at 10 V. Active production, ROHS3 compliant.","metaKeywords":null},"attributes":{"series":"OptiMOS™","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"OptiMOS™","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±16V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","Package / Case":"TO-263-7, D²Pak (6 Leads + Tab)","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"2.2V @ 140µA","Operating Temperature":"-55°C ~ 175°C (TJ)","Rds On (Max) @ Id, Vgs":"1.05mOhm @ 100A, 10V","Power Dissipation (Max)":"188W (Tc)","Supplier Device Package":"PG-TO263-7-3","Gate Charge (Qg) (Max) @ Vgs":"239 nC @ 10 V","Drain to Source Voltage (Vdss)":"30 V","Input Capacitance (Ciss) (Max) @ Vds":"17600 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"4.5V, 10V","Current - Continuous Drain (Id) @ 25°C":"180A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$3.5","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$3.50000","currency":"USD"},{"qty":10,"price":"$2.94200","currency":"USD"},{"qty":100,"price":"$2.37980","currency":"USD"},{"qty":500,"price":"$2.11534","currency":"USD"},{"qty":1000,"price":"$1.81126","currency":"USD"},{"qty":2000,"price":"$1.70550","currency":"USD"},{"qty":5000,"price":"$1.63625","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/c8304b458309e2a0c4df40921d606819.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the gate charge of the IPB180N03S4L01ATMA1?","answer":"The maximum total gate charge is 239 nC at 10 V gate-source voltage. This value determines the gate drive current needed for a given switching frequency."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IPB180N03S4L01ATMA1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IPB180N03S4L01ATMA1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}