{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IPB160N04S4LH1ATMA1","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IPB160N04S4LH1ATMA1","canonicalUrl":"https://icboms.com/infineon/IPB160N04S4LH1ATMA1","factsUrl":"https://icboms.com/api/mcp/products/IPB160N04S4LH1ATMA1","rawCanonicalId":null},"summary":{"shortDescription":"Infineon OptiMOS IPB160N04S4LH1ATMA1, N-Channel MOSFET, 40V Vdss, 160A Id at 25°C, 1.5mOhm Rds(on) at 100A, 10V, AEC-Q101, PG-TO263-7-3, -55°C to 175°C.","salesMarkdown":"The IPB160N04S4LH1ATMA1: Gate charge Qg is 190 nC at 10 V. Input capacitance Ciss is 14950 pF at 25 V drain-source. ## Package and thermal management for the TO-263-7 The PG-TO263-7-3 package (D²Pak with 6 leads plus exposed tab) requires a copper land pattern on the PCB that matches the tab area for thermal dissipation. The 167 W maximum power dissipation at case temperature assumes the tab is soldered to a thermal pad with adequate via array to the inner-layer copper planes. Surface-mount assembly with the exposed tab requires a reflow profile that accounts for the large thermal mass.","metaTitle":"Infineon IPB160N04S4LH1ATMA1 N-Channel MOSFET, 40V 160A","metaDescription":"Infineon IPB160N04S4LH1ATMA1 OptiMOS N-channel MOSFET, 40V drain-source, 160A continuous drain, 1.5 mOhm Rds(on) at 10V. AEC-Q101 qualified for automotive.","metaKeywords":null},"attributes":{"series":"OptiMOS™","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Grade":"Automotive","Series":"OptiMOS™","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"+20V, -16V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","Qualification":"AEC-Q101","Package / Case":"TO-263-7, D²Pak (6 Leads + Tab)","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"2.2V @ 110µA","Operating Temperature":"-55°C ~ 175°C (TJ)","Rds On (Max) @ Id, Vgs":"1.5mOhm @ 100A, 10V","Power Dissipation (Max)":"167W (Tc)","Supplier Device Package":"PG-TO263-7-3","Gate Charge (Qg) (Max) @ Vgs":"190 nC @ 10 V","Drain to Source Voltage (Vdss)":"40 V","Input Capacitance (Ciss) (Max) @ Vds":"14950 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"4.5V, 10V","Current - Continuous Drain (Id) @ 25°C":"160A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$3.0","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$3.00000","currency":"USD"},{"qty":10,"price":"$2.51700","currency":"USD"},{"qty":100,"price":"$2.03620","currency":"USD"},{"qty":500,"price":"$1.80992","currency":"USD"},{"qty":1000,"price":"$1.54974","currency":"USD"},{"qty":2000,"price":"$1.45925","currency":"USD"},{"qty":5000,"price":"$1.40000","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/8c8cfec70a209a0aa6e4bca067f3864e.pdf","sourceUrl":null},"ai":{"faq":[{"question":"Is IPB160N04S4LH1ATMA1 automotive qualified?","answer":"Yes, the part is AEC-Q101 qualified, which is the automotive-grade stress and reliability standard for discrete semiconductors."},{"question":"What is the Rds(on) of IPB160N04S4LH1ATMA1?","answer":"The maximum on-resistance is 1.5 mOhm at 100 A drain current and 10 V gate drive. The drive voltage range for achieving the rated Rds(on) is 4.5 V to 10 V, with the lower value giving a higher on-resistance."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IPB160N04S4LH1ATMA1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IPB160N04S4LH1ATMA1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}