{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IPB144N12N3GATMA1","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IPB144N12N3GATMA1","canonicalUrl":"https://icboms.com/infineon/IPB144N12N3GATMA1","factsUrl":"https://icboms.com/api/mcp/products/IPB144N12N3GATMA1","rawCanonicalId":null},"summary":{"shortDescription":"Infineon OptiMOS IPB144N12N3GATMA1, N-Channel MOSFET, 120 V Vdss, 56 A Id, 14.4 mOhm Rds(on) at 10 V, 49 nC Qg, PG-TO263-3 (D2PAK), -55 to 175 °C.","salesMarkdown":"## 120 V, 56 A N-channel — the OptiMOS power switch The Infineon IPB144N12N3GATMA1 is an N-channel enhancement-mode power MOSFET from the OptiMOS series, built on a standard metal-oxide semiconductor process. At full rated current the I²R loss is about 45 W, which the 107 W package power dissipation can handle with adequate heatsinking, but the junction temperature rise must be checked against the 175 °C absolute maximum. ## Gate drive and switching — 49 nC total gate charge Total gate charge of 49 nC at 10 V is moderate for a 120 V, 56 A part. A gate driver sourcing 1 A can charge the gate in about 49 ns, but the 3220 pF input capacitance at 60 V drain means the driver sees a capacitive load that rises with the Miller plateau. Practical switching frequencies in hard-switched topologies will land in the 50–150 kHz range before gate-drive losses dominate the thermal budget. The 4 V gate-threshold maximum at 61 µA drain current is a typical logic-level threshold — the part is not a sub-2.5 V logic-level device. The datasheet drive voltage for rated Rds(on) is 10 V, so a 12 V gate-drive rail is the natural choice; a 5 V rail will not fully enhance the channel and the on-resistance will be higher than the 14.4 mOhm spec. ## Package and thermal — D2PAK with a 175 °C junction ceiling The PG-TO263-3 (D2PAK) surface-mount package has a large copper tab that carries the drain current and conducts heat to the PCB. The 107 W power dissipation rating assumes the tab is soldered to a sufficient copper area on the board — a 1-inch-square pad on a 2-oz copper layer is a typical starting point. Mounting is surface-mount only — the D2PAK is not a through-hole part. ## Lifecycle and compliance — active, ROHS3, no obsolescence risk The ROHS3 compliance is confirmed, which covers the full ten restricted substance categories including the four phthalates.","metaTitle":"Infineon IPB144N12N3GATMA1 N-Channel MOSFET, 120 V, 56 A","metaDescription":"Infineon IPB144N12N3GATMA1 OptiMOS N-channel MOSFET, 120 V Vdss, 56 A Id, 14.4 mOhm Rds(on) at 10 V. Active product, ROHS3 compliant.","metaKeywords":null},"attributes":{"series":"OptiMOS™","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"OptiMOS™","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","Package / Case":"TO-263-3, D²Pak (2 Leads + Tab), TO-263AB","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 61µA","Operating Temperature":"-55°C ~ 175°C (TJ)","Rds On (Max) @ Id, Vgs":"14.4mOhm @ 56A, 10V","Power Dissipation (Max)":"107W (Tc)","Supplier Device Package":"PG-TO263-3","Gate Charge (Qg) (Max) @ Vgs":"49 nC @ 10 V","Drain to Source Voltage (Vdss)":"120 V","Input Capacitance (Ciss) (Max) @ Vds":"3220 pF @ 60 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"56A (Ta)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.97","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$2.34000","currency":"USD"},{"qty":10,"price":"$2.10300","currency":"USD"},{"qty":100,"price":"$1.69050","currency":"USD"},{"qty":500,"price":"$1.38894","currency":"USD"},{"qty":1000,"price":"$1.15745","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/50d50a17fbc6549d73b4e11fafd4eb57.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the closest functional equivalent to IPB144N12N3GATMA1?","answer":"The BSC118N10NSGATMA1 is a 100 V, 11.8 mOhm N-channel MOSFET in a similar OptiMOS family and D2PAK footprint, but its 100 V drain rating is lower than the 120 V of the IPB144N12N3GATMA1. The BSC070N10NS3GATMA1 offers 7 mOhm at 100 V, also in a similar package. Neither is a direct pin-for-pin replacement — the voltage class difference means the IPB144N12N3GATMA1 is the correct choice for 120 V-rated designs."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IPB144N12N3GATMA1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IPB144N12N3GATMA1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}