{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IPB120N04S401ATMA1","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IPB120N04S401ATMA1","canonicalUrl":"https://icboms.com/infineon/IPB120N04S401ATMA1","factsUrl":"https://icboms.com/api/mcp/products/IPB120N04S401ATMA1","rawCanonicalId":null},"summary":{"shortDescription":"Infineon OptiMOS™ N-Channel MOSFET, IPB120N04S401ATMA1, 40 V Vdss, 120 A continuous drain, 1.5 mOhm Rds(on) at 10 V, 176 nC gate charge, -55°C to 175°C junction, PG-TO263-3 (D2PAK) surface mount.","salesMarkdown":"## Gate charge and drive budget Total gate charge is 176 nC at 10 V. At a 100 kHz switching frequency, the average gate-drive current needed is roughly 17.6 mA — within the capability of most dedicated MOSFET drivers, but a microcontroller GPIO will not source that directly. The ±20 V Vgs max leaves headroom for gate-drive overshoot in a hard-switching topology. ## Thermal envelope and package Junction temperature range is -55 °C to 175 °C, making this part suitable for under-hood automotive or industrial environments where the die sees sustained high temperature. Maximum power dissipation is 188 W at the case — the actual limit in a real board depends on the copper area under the D2PAK tab and the airflow. It is ROHS3 compliant.","metaTitle":"Infineon IPB120N04S401ATMA1 OptiMOS N-Ch 40V 120A MOSFET","metaDescription":"Infineon IPB120N04S401ATMA1 OptiMOS N-channel 40V 120A MOSFET in D2PAK. 1.5 mOhm Rds(on) at 10V. Active lifecycle, ROHS3.","metaKeywords":null},"attributes":{"series":"OptiMOS™","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"OptiMOS™","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","Package / Case":"TO-263-3, D²Pak (2 Leads + Tab), TO-263AB","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 140µA","Operating Temperature":"-55°C ~ 175°C (TJ)","Rds On (Max) @ Id, Vgs":"1.5mOhm @ 100A, 10V","Power Dissipation (Max)":"188W (Tc)","Supplier Device Package":"PG-TO263-3","Gate Charge (Qg) (Max) @ Vgs":"176 nC @ 10 V","Drain to Source Voltage (Vdss)":"40 V","Input Capacitance (Ciss) (Max) @ Vds":"14000 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"120A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$3.67","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$3.67000","currency":"USD"},{"qty":10,"price":"$3.07800","currency":"USD"},{"qty":100,"price":"$2.48990","currency":"USD"},{"qty":500,"price":"$2.21328","currency":"USD"},{"qty":1000,"price":"$1.89512","currency":"USD"},{"qty":2000,"price":"$1.78445","currency":"USD"},{"qty":5000,"price":"$1.71200","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/8fcd64b91408ad5512b588b014c1878d.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What are the thermal specifications of IPB120N04S401ATMA1?","answer":"Junction temperature range is -55 °C to 175 °C. Maximum power dissipation is 188 W at the case. The actual thermal performance depends on PCB copper area and airflow."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IPB120N04S401ATMA1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IPB120N04S401ATMA1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}