{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IPB100N04S4H2ATMA1","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IPB100N04S4H2ATMA1","canonicalUrl":"https://icboms.com/infineon/IPB100N04S4H2ATMA1","factsUrl":"https://icboms.com/api/mcp/products/IPB100N04S4H2ATMA1","rawCanonicalId":null},"summary":{"shortDescription":"Infineon OptiMOS N-Channel MOSFET, 40 V Drain-Source, 100 A Continuous Drain, 2.4 mOhm Rds(on) at 10 V, 90 nC Gate Charge, TO-263-3 (D²Pak) Surface Mount, -55°C to 175°C Junction.","salesMarkdown":"## 40 V, 100 A N-channel — the conduction-loss floor The IPB100N04S4H2ATMA1 N-channel MOSFET has a 40 V drain-source voltage and 100 A continuous drain current. ## Switching loss and thermal budget Input capacitance Ciss is 7180 pF typical at 25 V drain-source. The 115 W maximum power dissipation at case temperature 25°C is the thermal ceiling. ## Package and mounting — the thermal path The TO-263-3 (D²Pak) surface-mount package with exposed tab requires a large copper area on the PCB for heat spreading. The supplier device package is PG-TO263-3-2.","metaTitle":"Infineon IPB100N04S4H2ATMA1 N-Channel MOSFET, 40V 100A","metaDescription":"Infineon IPB100N04S4H2ATMA1 OptiMOS N-channel MOSFET, 40V Vdss, 100A continuous drain, 2.4mOhm Rds(on) at 10V. Active production, ROHS3 compliant.","metaKeywords":null},"attributes":{"series":"OptiMOS™","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"OptiMOS™","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","Package / Case":"TO-263-3, D²Pak (2 Leads + Tab), TO-263AB","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 70µA","Operating Temperature":"-55°C ~ 175°C (TJ)","Rds On (Max) @ Id, Vgs":"2.4mOhm @ 100A, 10V","Power Dissipation (Max)":"115W (Tc)","Supplier Device Package":"PG-TO263-3-2","Gate Charge (Qg) (Max) @ Vgs":"90 nC @ 10 V","Drain to Source Voltage (Vdss)":"40 V","Input Capacitance (Ciss) (Max) @ Vds":"7180 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"100A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$2.74","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$2.74000","currency":"USD"},{"qty":10,"price":"$2.27200","currency":"USD"},{"qty":100,"price":"$1.80800","currency":"USD"},{"qty":500,"price":"$1.52984","currency":"USD"},{"qty":1000,"price":"$1.29805","currency":"USD"},{"qty":2000,"price":"$1.23315","currency":"USD"},{"qty":5000,"price":"$1.18679","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/ddae825ac8f52ccf9d79d2a41018ce7b.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the Rds(on) of the IPB100N04S4H2ATMA1?","answer":"The maximum Rds(on) is 2.4 mOhm at 100 A drain current with 10 V gate drive. This is the conduction-loss spec for the fully enhanced channel."},{"question":"What package does the IPB100N04S4H2ATMA1 come in?","answer":"It comes in a TO-263-3 (D²Pak) surface-mount package, supplier package code PG-TO263-3-2."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IPB100N04S4H2ATMA1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IPB100N04S4H2ATMA1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}