{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IPB100N04S2-04","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IPB100N04S2-04","canonicalUrl":"https://icboms.com/infineon/IPB100N04S2-04","factsUrl":"https://icboms.com/api/mcp/products/IPB100N04S2-04","rawCanonicalId":null},"summary":{"shortDescription":"Infineon IPB100N04S2-04 N-channel MOSFET, 40V Vdss, 100A Id, 3.3mOhm Rds(on) at 10V, 172nC gate charge, TO-263-3 (D²Pak) package, -55°C to 175°C operating temperature.","salesMarkdown":"## 40 V, 100 A, 3.3 mOhm — the power switch for high-current rails The 172 nC typical gate charge at 10 V means the gate driver needs to source and sink moderate charge for fast switching; expect a few hundred nanoseconds of rise time with a standard 2 A driver. ## Package and mounting For a 100 kHz switching frequency, the average gate-drive current required is about 17 mA — well within the capability of most half-bridge drivers. The input capacitance of 5300 pF at 25 V drain bias is moderate; the Miller plateau will be visible on the gate waveform. If you are paralleling multiple devices, match the gate resistors to within 10% to avoid current hogging during turn-on. ## Thermal and temperature range The 300 W power dissipation rating at case temperature 25°C assumes an infinite heatsink — in practice, derate based on the junction-to-case thermal resistance. The 175°C max junction temperature gives headroom for transient overloads, but continuous operation near the limit will reduce lifetime.","metaTitle":"IPB100N04S2-04 N-Channel MOSFET, 40V 100A, 3.3mOhm Rds(on)","metaDescription":"Infineon IPB100N04S2-04 N-channel MOSFET, 40V Vdss, 100A continuous drain, 3.3mOhm Rds(on) at 10V, TO-263-3 package. Active lifecycle, available to order.","metaKeywords":null},"attributes":{"series":"*","packageCase":null,"mountingType":null,"rohsStatus":null,"productStatus":"Active","categoryPath":["Logic ICs"],"specifications":{"Series":"*","Package":"Bulk","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","Package / Case":"TO-263-3, D²Pak (2 Leads + Tab), TO-263AB","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 250µA","Operating Temperature":"-55°C ~ 175°C (TJ)","Rds On (Max) @ Id, Vgs":"3.3mOhm @ 80A, 10V","Power Dissipation (Max)":"300W (Tc)","Supplier Device Package":"PG-TO263-3-2","Gate Charge (Qg) (Max) @ Vgs":"172 nC @ 10 V","Drain to Source Voltage (Vdss)":"40 V","Input Capacitance (Ciss) (Max) @ Vds":"5300 pF @ 25 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"100A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.98","stockQuantity":0,"priceTiers":[{"qty":152,"price":"$1.98000","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/3c99e5be147bb3af750c867847063678.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the Rds(on) and gate charge of IPB100N04S2-04?","answer":"The gate charge (Qg) is 172 nC maximum at 10 V gate voltage. These are the key switching and conduction numbers for sizing the gate driver and estimating losses."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IPB100N04S2-04","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IPB100N04S2-04 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}