{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IPB080N03L G","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IPB080N03L-G","canonicalUrl":"https://icboms.com/infineon/IPB080N03L-G","factsUrl":"https://icboms.com/api/mcp/products/IPB080N03L%20G","rawCanonicalId":null},"summary":{"shortDescription":"Infineon OptiMOS 3 IPB080N03L G, N-Channel Power MOSFET, 30 V Vdss, 8 mOhm Rds(on) @ 30 A, 10 V, 50 A continuous drain, TO-263-3 (D2Pak) surface mount, -55 to 175 °C junction.","salesMarkdown":"## Gate charge and switching speed — what 18 nC Qg means for the driver Total gate charge is 18 nC at 10 V gate drive. For a 100 kHz switching frequency, the average gate-drive current is about 1.8 mA — well within the output capability of a standard gate-driver IC. The 1900 pF input capacitance at 15 V drain bias tells you the driver sees a moderate capacitive load; a 1 A gate-driver will switch the MOSFET in tens of nanoseconds, though the miller plateau will dominate the actual switching loss. ## Junction temperature range — -55 to 175 °C That 175 °C ceiling is the absolute maximum junction temperature — the 47 W power dissipation rating at case temperature assumes you can keep the case cool enough to stay below that limit. In practice, for an under-hood automotive or industrial motor-drive environment where ambient hits 105 °C, the 8 mOhm Rds(on) keeps the die temperature rise manageable at moderate loads.","metaTitle":"Infineon IPB080N03L G N-Channel MOSFET, 30 V, 8 mOhm, TO-263","metaDescription":"Infineon IPB080N03L G OptiMOS 3 N-channel MOSFET, 30 V Vdss, 8 mOhm Rds(on) at 30 A, 50 A continuous drain, -55 to 175 C junction range.","metaKeywords":null},"attributes":{"series":"OptiMOS™3","packageCase":null,"mountingType":null,"rohsStatus":"Not applicable","productStatus":"Active","categoryPath":[],"specifications":{"Series":"OptiMOS™3","Package":"Bulk","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","Package / Case":"TO-263-3, D²Pak (2 Leads + Tab), TO-263AB","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"2.2V @ 250µA","Operating Temperature":"-55°C ~ 175°C (TJ)","Rds On (Max) @ Id, Vgs":"8mOhm @ 30A, 10V","Power Dissipation (Max)":"47W (Tc)","Supplier Device Package":"PG-TO263-3-2","Gate Charge (Qg) (Max) @ Vgs":"18 nC @ 10 V","Drain to Source Voltage (Vdss)":"30 V","Input Capacitance (Ciss) (Max) @ Vds":"1900 pF @ 15 V","Drive Voltage (Max Rds On, Min Rds On)":"4.5V, 10V","Current - Continuous Drain (Id) @ 25°C":"50A"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$0.4","stockQuantity":0,"priceTiers":[{"qty":751,"price":"$0.40000","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/322a2e885f4c67739710276eb1584b39.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the difference between IPB080N03L G and IPB160N03L G?","answer":"Both are 30 V N-channel OptiMOS 3 MOSFETs in the same TO-263 package. The IPB080N03L G has an 8 mOhm Rds(on) rating; the IPB160N03L G is a higher on-resistance variant (16 mOhm) with a correspondingly lower current rating. The IPB080N03L G is the lower-loss choice for higher-current loads."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IPB080N03L-G","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IPB080N03L-G when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}