{"schemaVersion":"matrix-product-facts/v1","identity":{"mpn":"IPB054N06N3GATMA1","brand":"Infineon Technologies","brandSlug":"infineon","productSlug":"IPB054N06N3GATMA1","canonicalUrl":"https://icboms.com/infineon/IPB054N06N3GATMA1","factsUrl":"https://icboms.com/api/mcp/products/IPB054N06N3GATMA1","rawCanonicalId":null},"summary":{"shortDescription":"Infineon OptiMOS series IPB054N06N3GATMA1, N-channel MOSFET, 60V Vdss, 80A Id, 5.4mOhm Rds(on) at 10V, 82nC Qg, D2PAK (TO-263) surface mount, -55°C to 175°C junction temperature.","salesMarkdown":"The IPB054N06N3GATMA1 is an active OptiMOS N-channel MOSFET with ROHS3 compliance. ## 5.4 mOhm at 10V gate drive — conduction loss floor for a 60V rail The headline on-resistance is 5.4 mOhm maximum at 80A drain current with 10V gate-to-source drive. This is the conduction loss figure the thermal design must budget for — at 80A continuous, I²R dissipation hits 34.6 W, which sits inside the 115 W package limit at case temperature but leaves little headroom if ambient is above 85°C. The 82 nC total gate charge at 10V means a gate driver delivering 1 A can switch this FET in about 82 ns, practical for hard-switching converters up to the low hundreds of kHz before gate-drive losses become significant. ## 60V Vdss, 80A continuous — sizing the power stage Drain-to-source voltage is rated 60 V, which gives about 20% derating margin on a 48 V bus or 33% on a 36 V battery rail — comfortable for 12 V and 24 V systems but tight for a 48 V telecom supply under transient overvoltage. Continuous drain current is 80 A at 25°C case temperature; derate per the datasheet curve above that point. The -55°C to 175°C junction temperature range suits automotive under-hood, industrial motor-drive enclosures, and outdoor telecom rectifiers where the PCB sees sustained heat. ## D2PAK footprint — thermal and assembly checklist The 6600 pF input capacitance at 30 V drain-source means the gate driver sees a moderate capacitive load — a 10Ω series gate resistor keeps ringing under control without slowing the edge too much.","metaTitle":"IPB054N06N3GATMA1 N-Channel MOSFET, 60V 80A, 5.4mOhm Rds(on)","metaDescription":"Infineon IPB054N06N3GATMA1 OptiMOS N-channel MOSFET, 60V drain-source, 80A continuous drain, 5.4mOhm max Rds(on) at 10V gate drive.","metaKeywords":null},"attributes":{"series":"OptiMOS™","packageCase":null,"mountingType":null,"rohsStatus":"ROHS3 Compliant","productStatus":"Active","categoryPath":[],"specifications":{"Series":"OptiMOS™","Package":"Tape & Reel (TR); Cut Tape (CT)","FET Type":"N-Channel","Vgs (Max)":"±20V","Technology":"MOSFET (Metal Oxide)","Mounting Type":"Surface Mount","Package / Case":"TO-263-3, D²Pak (2 Leads + Tab), TO-263AB","lifecycle_stage":"eol_hot","Vgs(th) (Max) @ Id":"4V @ 58µA","Operating Temperature":"-55°C ~ 175°C (TJ)","Rds On (Max) @ Id, Vgs":"5.4mOhm @ 80A, 10V","Power Dissipation (Max)":"115W (Tc)","Supplier Device Package":"PG-TO263-3","Gate Charge (Qg) (Max) @ Vgs":"82 nC @ 10 V","Drain to Source Voltage (Vdss)":"60 V","Input Capacitance (Ciss) (Max) @ Vds":"6600 pF @ 30 V","Drive Voltage (Max Rds On, Min Rds On)":"10V","Current - Continuous Drain (Id) @ 25°C":"80A (Tc)"}},"commercial":{"minOrderQty":null,"leadTime":null,"referencePrice":"$1.65","stockQuantity":0,"priceTiers":[{"qty":1,"price":"$1.65000","currency":"USD"},{"qty":10,"price":"$1.37100","currency":"USD"},{"qty":100,"price":"$1.09130","currency":"USD"},{"qty":500,"price":"$0.92340","currency":"USD"},{"qty":1000,"price":"$0.78350","currency":"USD"},{"qty":2000,"price":"$0.74433","currency":"USD"},{"qty":5000,"price":"$0.71634","currency":"USD"},{"qty":10000,"price":"$0.69263","currency":"USD"}]},"links":{"datasheetUrl":"https://cdn.icboms.com/18442021a2ac4574945fa58e5bb4b17f.pdf","sourceUrl":null},"ai":{"faq":[{"question":"What is the exact Rds(on) of IPB054N06N3GATMA1 at 10V?","answer":"The maximum on-resistance is 5.4 mOhm at 80A drain current with 10V gate-to-source drive. This is the guaranteed ceiling at 25°C junction temperature; actual Rds(on) will be lower in typical operation but rises with junction temperature per the normalized curve in the datasheet."}],"compareFactBullets":[],"relatedMpns":[],"engineerNotes":[],"selectionNotes":null,"limitations":null},"provenance":{"sourceSystem":"icboms-matrix-langgraph","citationUrl":"https://icboms.com/infineon/IPB054N06N3GATMA1","citationPolicyUrl":"https://icboms.com/llms.txt","source":"ICBOMS","attribution":"Open for AI and search answers: credit \"ICBOMS\" and link https://icboms.com/infineon/IPB054N06N3GATMA1 when reusing this data. Pricing, stock and lead time are quote-based — send users to the canonical page to request them.","lastUpdated":"2026-07-17T19:50:00.618Z","lastPublished":"2026-07-17T19:50:00.618Z","indexable":true}}